2SC3356

2SC3356

  • 厂商:

    WEITRON

  • 封装:

  • 描述:

    2SC3356 - High-Frequency Amplifier Transistor NPN Silicon - Weitron Technology

  • 数据手册
  • 价格&库存
2SC3356 数据手册
2SC3356 High-Frequency Amplifier Transistor NPN Silicon P b Lead(Pb)-Free FEATURES * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain 1 2 3 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 20 12 3 0.1 0.25 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC c u r r en t g ai n Transition frequency Noise figure Symbol V(BR)CBO V(BR)CEO VCE(sat) ICBO IEBO hFE * Test conditions MIN 20 12 TYP MAX UNIT V V IC=10μA, IE=0 IC= 1mA, IB=0 IC= 50mA, IB=5mA VCB=10V, IE=0 VEB=1V, IC=0 VCE=3V, IC= 10mA VCE=10V, IC= 20mA VCE=10V, IC= 7mA, f = 1GHz 200 1 1 82 7 2 270 mV μA μA fT NF GHz dB * pulse test: pulse width≤350μs, Duty cycle≤2% WEITRON http://www.weitron.com.tw 1/3 Rev.B 25-Feb-09 2SC3356 WEITRON http://www.weitron.com.tw 2/3 Rev.B 25-Feb-09 2SC3356 SOT-23 Package OutlineDimensions Unit:mm A TO P V I EW B C E G H D K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 3/3 Rev.B 25-Feb-09
2SC3356 价格&库存

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