2SC4083

2SC4083 NPN Silicon Transistor P b Lead(Pb)-Free 1 3 FEATURES: * Radio frequency ampli er * High transition frequency * High gain with low collector-to base time constant * Low noise (NF) * Marking: 1D 1. BASE 2. EMITTER 3. COLLECTOR 2 SOT-323(SC-70) Maximum Ratings ( TA=25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg Value 20 11 3 50 0.2 150 -55 to +150 Unit V V V mA W °C °C SOT-323 Outline Demensions A Unit:mm TOP VIEW D E G H B C K L J M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw 1/4 02-Jun-10 2SC4083 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified) Parameter Collector-base breakdown voltage I C =10 A, I E =0 WEITRON Symbol V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO hFE V CE(sat) fT Cob C C · rbb NF Min 20 11 3 56 - Typ 1.2 3.5 Max 0.5 0.5 270 0.5 1.5 12 - Unit V V V µA µA V GHz pF pS dB Collector-emitter breakdown voltage I C = 1mA, I B =0 Emitter-base breakdown voltage I E = 10 A, IC =0 Collector cut-o current VCB =10V, I E =0 Emitter cut-o current VEB =2V, IC =0 DC current gain VCE =10V, IC = 5mA Collector-base saturation voltage IC =10mA, I B =5mA Transition frequency VCE =10V,I C =10mA, f =500MHz Output capacitance VCB =10V,I E =0, f =1MHz Collector-base time constant V CB =10V,I C =10mA, f=31.8MHz Noise gure V CE =6V,I C =2mA,f =500MHz, Rg=50 CLASSIFICATION OF hFE Rank Range N 56-120 P 82-180 Q 120-270 WEITRON http://www.weitron.com.tw 2/4 02-Jun-10 2SC4083 Typical Characteristics WEITRON WEITRON http://www.weitron.com.tw 3/4 02-Jun-10 2SC4083 WEITRON WEITRON http://www.weitron.com.tw 4/4 02-Jun-10