2SC4548

2SC4548 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(TA=25ºC Unless Otherwise Noted) Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Device Disspation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value 400 400 5 200 500 +150 -55 to +150 Unit V V V mA mW ˚C ˚C WEITRON http://www.weitron.com.tw 1/3 03-Jun-10 2SC4548 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=10µA, IE=0 Collector-Emitter Breakdown Voltage IC=1mA, IB=0 Emitter-Base Breakdown Voltage IE=10µA, IC=0 Collector Cut-O Current VCB=300V, IE =0 Emitter-Cut-O Current VEB=4V, I C=0 ON CHARACTERISTICS DC Current Gain VCE=10V, IC =50mA Collector-Emitter Saturation Voltage IC=50mA, IB =5mA Base-Emitter Saturation Voltage IC=50mA, IB =5mA DYNAMIC CHARACTERISTICS Transition Frequency VCE=30V, IC =10mA Output Capacitance VCB=30V, IE =0, f=1MHz Turn-ON Time VCC=150V, I C=50mA, IB1=-IB2=5mA Turn-OFF Time VCC=150V, I C=50mA, IB1=-IB2=5mA CLASSIFICATION OF hFE Rank Range Marking D 60-120 CN E 100-200 fT Cob t on to 70 4.0 0.25 5.0 MHz pF µS µS hFE VCE(sat) VBE(sat) 60 200 0.6 1.0 V V Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 400 400 5.0 Typ Max 0.1 0.1 Unit V V V µA µA WEITRON http://www.weitron.com.tw 2/3 03-Jun-10 2SC4548 SOT-89 Outline Dimensions unit:mm E G Dim A SOT-89 J C H K L B D A B C D E G H J K L Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 WEITRON http://www.weitron.com.tw 3/3 03-Jun-10