2SC5354

2SC5354 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free FEATURES * Excellent hFE Linearity * Low Noise 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC Ib PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 50 0.2 150 -55-150 Units V V V mA mA W ℃ ℃ SOT-23 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) V CE(sat) Test conditions MIN 60 50 5 0.1 0.1 70 0.1 80 3.5 10 700 0.25 V MHz pF dB TYP MAX UNIT V V V IC=100 μA, IE=0 IC= 10mA, I B=0 IE = 10μA, I C=0 VCB=60V, IE=0 VEB=5V, IC =0 VCE=6V, IC= 2mA IC=100mA,IB=10mA VCE=10V, IC= 1mA VCB=10V,IE=0,f=1MHz VCE=6V, I C= 0.1mA, f=1KHZ,Rg=10KΩ μA μA fT Cob NF CLASSIFICATION OF hFE Rank Range O 70 - 140 Y 120 - 240 G 200 - 400 L 300 - 700 WEITRON http://www.weitron.com.tw 1/3 04-Oct-2010 2SC5354 Typical Characteristics WEITRON http://www.weitron.com.tw 2/3 04-Oct-2010 2SC5354 SOT-23 Package OutlineDimensions A Unit:mm TOP V I EW B C E G H D K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 3/3 04-Oct-2010