2SD1899
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
1.BASE 2.COLLECTOR 3.EMITTER 1 2 3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 60 60 7 3 1 150 -55-150 Units V V V A W ℃ ℃
D-PAK(TO-252)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat) fT Cob ton tstg tf VCC=10V,IC=1A,IB1=-IB2=-0.1A Test conditions MIN 60 60 7 TYP MAX UNIT V V V μA μA
IC=100μA,IE=0 IC =1mA,IB=0 IE=100μA,IC=0 VCB=60V,IE=0 VEB=7V,IC=0 VCE=2V,IC=200mA VCE=2V,IC=600mA VCE=2V,IC=2A IC=1.5A,IB=150mA IC=1.5A,IB=150mA VCE=5V,IC=1.5A VCB=10V,IE=0,f=1MHz
120 30
10 10
60 100 50
400
0.25 1.2 V V MHz pF
-
0.5 2.0 0.5
-
μs
CLASSIFICATION OF Rank Range
hFE(2) M 100-200 L 160-320 K 200-400
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2SD1899
Typical Characteristics
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2SD1899
Typical Characteristics
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2SD1899
TO-252 Outline Dimensions
unit:mm
E A 4 G H J 1 2 3
B
TO-252
Dim A B C D E G H J K L M
M D C L K
Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90
Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50
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