2SD2098R

2SD2098 NPN Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C ABSOLUTE MAXIMUM RATINGS (Ta=25% ) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature, Storage Temperature PC Tj , Tstg Value 20 50 6.0 5.0 10 0.5 150, -55 to +150 Unit Vdc Vdc Vdc Adc(DC) Adc (Pulse) (1) W % C Device Marking 2SD2098Q=AHQ, 2SD2098R=AHR ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 50 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 50 µAdc, IC=0) Collector Cutoff Current (VCB= 40 Vdc, IE=0) Emitter Cutoff Current (VEB=5.0 Vdc, IC =0) Note: 1. Single pulse pw=10ms Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 20 50 6.0 Max 0.5 0.5 Unit Vdc Vdc Vdc uAdc uAdc WE ITR O N http://www.weitron.com.tw 2SD2098 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.5 Adc, VCE=2.0 Vdc) Collector-Emitter Saturation Voltage (IC=100 mAdc, IB=4 Adc) Transition Frequency (IE=-50 mAdc, VCE=6.0 Vdc,f=100 MHz) Output Capacitance (IE=0 Adc, VCE=20 Vdc,f=1 MHz) hFE VCE(sat) fT Cob 120 0.3 150 35 390 1.0 Vdc MHz PF CLASSIFICATION OF hFE Item Range Q 120-270 R 180-390 WEITRON http://www.weitron.com.tw 2SD2098 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 IC , COLLECTOR CURRENT(A) Ta =100 C 25 C -25 C IC , COLLECTOR CURRENT(A) VCE =2V 5 4 3 50mA 45mA Ta =25 C 30mA 25mA 20mA 15mA 40mA 35mA 10mA 2 1 0 0 5mA IB=0mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.8 1.2 1.6 2.0 VBE ,BASE TO EMITTER VOLTAGE (V) VCE ,COLLECTOR TO EMITTER VOLTAGE(V) FIG.1 Grounded Emitter Propagation Characteristics 5000 hFE ,DC CURRENT GAIN FIG.2 Grounded Emitter Output Characteristics Cob ,COLLECTOR OUTPUT CAPACITANCE(PF) VCE(sat) ,COLLECTOR SATURATION VOLTAGE(V) Cib ,EMITTER INPUT CAPACITANCE(PF) 2 1 Ta =25 C Ta =25 C 2000 1000 500 200 100 50 VCE =5V 2V 1V 0.5 0.2 0.1 0.05 0.02 IC/IB =50 40 30 10 20 10 5 1m 2 m 5m 0.010.020.050.1 0.2 0 .5 1 2 IC ,COLLECTOR CURRENT(A) 5 10 0.01 2m 5 m 0.01 0.0 2 0.0 5 0.1 0 . 2 0 . 5 1 2 5 10 IC ,COLLECTOR CURRENT(A) FIG.3 DC Current Gain vs. Collector Current 1000 500 200 100 50 20 10 5 2 1 1m 2m 5m 10m 20m 50m 0.1 0.2 IE,EMITTER CURRENT(A) Ta =25 C VCE =6V FIG.4 Collector-Emitter Saturation Voltage vs. Collector Current Ta =25 C f=1MHz IC =0A IE =0A Cib 1000 500 200 100 50 20 10 0.1 0.2 0.5 1 2 5 f T ,TRANSITION FREQUENCY(MHz) Cob 0.5 1 10 20 50 VCB ,COLLECTOR TO BASE VOLTAGE(V) VEB ,EMITTER TO BASE VOLTAGE(V) FIG.5 Gain Bandwidth Product vs. Emitter Current FIG.6 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage WEITRON http://www.weitron.com.tw 2SD2098 IC , COLLECTOR CURRENT(A) 50 20 10 5 2 1 500m 200m 100m 50m 20m 10m Ic max(Pulse) Ta =100 C Single pulse Recommended land pattern ms 00 =1 s Pw m =1 Pw 0ms Pw =1 0.2 0.5 1 2 VCE ,COLLECTOR TO EMITTER VOLTAGE(V) FIG.7 Safe Operating Area Pw 00 =1 m s DC 5 10 20 50 100 200 500 WEITRON http://www.weitron.com.tw 2SD2098 SOT-89 Outline Dimensions unit:mm SOT-89 E G A J C H K L B D Dim A B C D E G H J K L Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900 WEITRON http://www.weitron.com.tw