2SD313

2SD313 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C Symbol VCBO VCEO VEBO IC PD TJ Tstg Value 60 60 5.0 3.0 1.75 30 0.24 +150 -55 to +150 Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=100µA, I E =0 Collector-Emitter Breakdown Voltage IC=1mA, I B =0 Emitter-Base Breakdown Voltage IE=100µA, I C =0 Collector Cut-Off Current VCB=60V, I E=0 Emitter-Cut-Off Current VEB=60V,IE=0 Emitter-Cut-Off Current VEB=4.0V, IC =0 Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO Min 60 60 5.0 Max Max 100 1.0 100 Unit V V V µA mA µA WEITRON http://www.weitron.com.tw 1/4 06-Feb-07 2SD313 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic ON CHARACTERISTICS DC Current Gain VCE= 2V, IC= 1A VCE= 2V, IC= 0.1A Collector-Emitter Saturation Voltage IC= 2A, IB = 200mA Base-Emitter On Voltage VCE= 2V, I C = 1A Transition Frequency VCE= 5V, IC= 500mA Transition Frequency VCB= 10V, I E= 0 , f=1MHz hFE1 hFE2 VCE(sat) VBE fT Cob 40 40 8 65 320 1.0 1.5 V V MHz pF Symbol Min Typ Max Unit CLASSIFICATION OF hFE(1) Rank Range C 40-80 D 60-120 E 100-200 F 160-320 WEITRON http://www.weitron.com.tw 2/4 06-Feb-07 2SD313 Sa tu ration Vol ta ge, VCE (S AT) (mV) 1000 10000 IC=1 0IB 1000 100 h FE 10 100 1 10 100 1000 10000 10 10 100 1000 10000 Fig.1 DC Current Gain 10 00 0 I C=1 0IB Co ll ector Curren t (mA) Fig.2 Saturation Voltage vs Collector Current 10 C ol le ctor Curren t (mA) 1 00 0 Collecto r Current (A) 10 10 0 1 00 0 10 00 0 VBE (S AT) (mA) 1 10 0 Colle ctor Current (mA) 0. 1 1 10 Colle ctor to Emitte r Vo ltag e (V) 1 00 Fig.3 VBE(sa t) vs IC 10000 Fig.4 SOA VCE=2V VB E(ON) (mV) 1000 100 10 100 1000 10000 C ol le cto r C urren t (mA) Fig.5 VBE(on) vs IC WEITRON http://www.weitron.com.tw 3/4 06-Feb-07 2SD313 TO-220 Outline Dimensions unit: mm D F ∅ C1 A H E1 E B1 B L1 A1 G G1 C Dim A A1 B B1 C C1 D E E1 G G1 F H L L1 Φ TO-220 Min Max 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 T YP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73 L WEITRON http://www.weitron.com.tw 4/4 06-Feb-07