2SD669

2SD669/2SD669A NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage , Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg 2SD669 180 120 5.0 1.5 1.0 150 -55 to +150 2SD669A 180 160 5.0 Unit V V V A W ˚C ˚C WEITRON http://www.weitron.com.tw 1/5 18-Oct-05 2SD669/2SD669A ELECTRICAL CHARACTERISTICS ( TA=25°C unless otherwise noted) (Countinued) Characteristics Collector-Emitter Breakdown Voltage IC = 1.0mA, IE = 0 Collector-Base Breakdown Voltage 2SD669 IC = 10mA, IB = 0 2SD669A Emitter-Base Breakdown Voltage IC = 0, IE = 1.0mA Collector Cutoff Current VCB = 160V, IE=0 Emitter Cutoff Current VEB = 4.0V, IC=0 ON CHARACTERISTICS DC Current Gain VCE = 5.0V, IC = 150mA VCE = 5.0V, IC = 500mA Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA Base-Emitter ON Voltage VCE = 5.0V, IC = 150mA Transition frequency VCE = 5.0V, IC = 150mA Collecotr Output Capacitance VCB = 10V, IE = 0, f = 1MHz CLASSIFICATION OF hFE(1) Rank Range 2SD669 2SD669A B 60-120 60-120 2SD669 2SD669A hFE(1) 60 60 30 140 14 320 200 1.0 1.5 V V MHz pF Symbol V(BR)CBO Min 180 120 160 5.0 Typ Max Unit V V(BR)CEO V(BR)EBO ICBO IEBO - 10 10 V V µA mA - hFE(2) VCE(sat) VBE(ON) fT Cob - C 100-200 100-200 D 160-320 - WEITRON http://www.weitron.com.tw 2/5 18-Oct-05 2SD669/2SD669A 30 Collector power dissipation PC (W) 3 Collector current IC (A) 1.0 0.3 0.1 0.03 0.01 2SD669 1 3 10 30 100 DC Operation(TC = 25°C) (120 V, 0.04 A) (160 V, 0.02A) 2SD669A 300 (13.3 V, 1.5 A) (40 V, 0.5 A) 20 10 0 50 100 150 Fig.1 Maximum Collector Dissipation Curve 1.0 0.8 0.6 0.4 0.2 50 5. 5.4.5 .0 4 3.5 3.0 2.5 Case temperature TC (°C) Fig.2 Area of Safe Operation 500 Collector current IC (mA) Collector to emitter voltage VCE (V) Collector current IC (A) P TC = 25°C 200 100 VCE = 5 V C = 1.5 1 .0 10 5 2 1 0 0.5 mA IB = 0 0 Fig.3 Typical Output Characteristecs 10 20 30 40 50 Collector to emitter voltage VCE (V) Fig.4 Typical Transfer Characteristics Collector to emitter saturation voltage VCE(sat) (V) 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) 300 DC current transfer ratio hFE 250 200 150 100 50 1 75°C Ta = 1.2 1.0 0.8 0.6 IC = 10 IB 25 –25 25 –25 20 Ta = 75° C 2.0 20 W 50 VCE = 5 V 1 3 10 100 300 1,000 3,000 30 Collector current IC (mA) 0.2 0 1 3 Fig.5 DC Current Transfer Ratio vs. Collector Current 10 30 100 300 Collector current IC (mA) Fig.6 Collector to Emitter Saturation Voltage vs. Collector Current WEITRON http://www.weitron.com.tw 3/5 –2 25 5 T C =7 0.4 5° C 1,000 18-Oct-05 2SD669/2SD669A 1.2 Base to emitter ON voltage VBE( ON ) (V) 1.0 0.8 0.6 0.4 0.2 0 Gain bandwidth product fT (MHz) IC = 10 IB 25°C TC = – 25 75 240 200 160 120 80 40 0 10 VCE = 5 V Ta = 25°C 1 3 10 30 100 300 Collector current IC (mA) 1,000 30 100 300 Collector current IC (mA) 1,000 Fig.7 Base to Emitter ON Voltage vs. Collector Current Fig.8 Gain Bandwidth Product vs. Collector Current Collector output capacitance Cob (pF) 200 100 50 20 10 5 2 f = 1 MHz IE = 0 1 10 2 5 20 50 100 Collector to base voltage VCB (V) Fig.9 Collector Output Capacitance vs. Collector to Base Voltage WEITRON http://www.weitron.com.tw 4/5 18-Oct-05 2SD669/2SD669A TO-126C Outline Dimensions unit:mm TO-126C Dim A A1 b b1 c D E e e1 L L1 P Φ1 Φ2 Min 3.000 1.800 0.660 1.170 0.450 7.800 10.800 4.460 15.100 1.300 4.040 2.700 3.100 Max 3.400 2.200 0.860 1.370 0.600 8.200 11.200 4.660 15.500 1.500 4.240 2.900 3.300 2.280 TYP WEITRON http://www.weitron.com.tw 5/5 18-Oct-05