WEITRON
NPN Transistor
P b Lead(Pb)-Free
3. BASE COLLECTOR 2.
2SD965
FEATURES :
* Flash unit of camera * Switching circuit
1. EMITTER 2. COLLECTOR 3. BASE 1. EMITTER
TO-92
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 42 22 6 5 750 150 -55-150 Units V V V A mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) Collector-emitter saturation voltage Transition frequency VCE(sat) fT Test conditions MIN 42 22 6 0.1 0.1 150 340 150 0.35 150 V MHz 2000 TYP MAX UNIT V V V
IC=0.1mA, IE=0 IC=1mA, IB=0 IE= 10μA, IC=0 VCB=30V,IE=0 VEB=6V, IC=0 VCE=2V, IC= 0.15 mA VCE= 2V,IC = 500 mA VCE=2V, IC = 2A IC=3000mA,IB=100 mA VCE=6V, IC=50mA,f=30MHz
μA μA
CLASSIFICATION OF Rank Range
hFE(2) R 340-600 T 560-950 V 900-2000
WEITRON
hpp://www.weitron.com.tw
1/2
01-Sep-09
2SD965
Ratings and Characteristic Curves
WEITRON
hpp://www.weitron.com.tw
2/2
01-Sep-09
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