3DD13002B

3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation T A =25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 400 600 6.0 1.0 1.0 150 -55 to +150 Unit Vdc Vdc Vdc Adc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCB= 600 Vdc, IE=0) Emitter Cutoff Current (VEB= 6.0Vd c, IC =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 400 600 6.0 Max 100 100 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw 3DD13002B Electrical Characteristics ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= 100 mAdc, VCE=10Vdc) (IC= 200 mAdc, VCE= 10Vdc) (IC= 10 mAdc, VCE= 10Vdc) Collector-Emitter Saturation Voltage (IC= 200 mAdc, IB= 40 mAdc) Base-Emitter Saturation Voltage (IC= 200 mAdc, IB= 40 mAdc) Current-Gain-Bandwidth Product (IC= 100 mAdc, VCE= 10 Vdc, f=1.0MHz) hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) fT 20 9 6 - 25 40 . 0.8 1.1 - Vdc Vdc - 5.0 - MHz Switching Characteristics Storage Time Fall Time VCC =100V, IC =1A IB1=-I B2=200mA ts tf 2.5 0.5 us us Classification of hFE(2) Rank Range 9-15 15-20 20-25 25-30 30-35 35-40 WEITRON http://www.weitron.com.tw 3DD13002B 80 hFE ,DC CURRENT GAIN VCE ,COLLECTOR-EMITTER VOLTAGE(V) WE IT R ON 2 TJ =25 C 1.6 IC=0.2A 1.2 0.8 0.4 0 0.002 0.005 0.01 0.02 VCE =2V 60 40 30 20 25 C 10 8 6 4 0.02 0.03 0.050.07 0.1 0.2 0.3 0.5 0.7 1 2 0.05 0.1 0.2 0.5 1 2 IC , COLLECTOR CURRENT(AMP) IB , BASE CURRENT(AMP) FIG.1 DC Current Gain 1.4 VBE(sat) @IC/IB =5 1.2 V, VOLTAGE(V) FIG.2 Collector Saturation Region 3.5 3.0 V, VOLTAGE(V) 2.5 2.0 1.5 1.0 0.5 IC/IB =5 1 0.8 0.6 0.4 0.02 0.03 0.05 0.07 0.1 25 C 0.2 0.3 0.5 0.7 1 2 0 0.01 0.1 0.5 1 2 IC , COLLECTOR CURRENT(AMP) I C , COLLECTOR CURRENT(AMP) FIG.3 Base-Emitter Voltage 10 5 2 1 0.5 0.2 0.1 0.0 5 0.02 0.01 5 10 20 50 100 200 300 500 VCE ,COLLECTOR-EMITTER VOLTAGE(V) FIG.4 Collector-Emitter Saturation Region 1.6 IC , COLLECTOR CURRENT(AMP) IC , COLLECTOR CURRENT(AMP) 1.2 _ TJ < 100 C IB1 =1A 0.8 TC =25 C 0.4 5V 3V VBE(off) =6V 0 0 100 200 300 1.5V 400 500 600 700 800 VCE ,COLLECTOR-EMITTER CLAMP VOLTAGE(V) FIG.5 Active Region Safe Operation Area FIG.6 Reverse Bias Safe Operating Area WEITRON http://www.weitron.com.tw 3DD13002B WE IT R ON 1 POWER DERATING FACTOR 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 T C , CASE TEMPERATURE( C) FIG.7 Forward Bias Power Derating WEITRON http://www.weitron.com.tw 3DD13002B TO-92 Outline Dimensions E unit:mm TO-92 H C J K G Dim A B C D E G H J K L Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A