3DD13003B

WEITRON NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 3DD13003B FEATURES : • power switching applications 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 700 400 9 1.5 0.9 150 -55 to +150 Units V V V A W °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency Fall time Storage time CLASSIFICATION OF h FE Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO ICEO IEBO hFE V CE(sat)1 VCE(sat)2 V BE(sat) fT tf ts Test conditions IC= 1mA, IE=0 IC= 10mA, IB=0 IE= 1mA, IC=0 VCB= 700V, IE=0 VCE= 400V, IB=0 VEB= 7V, IC=0 VCE= 10V, IC= 0.4 A IC=1.5A,IB= 0.5A IC=0.5A, IB= 0.1A IC=0.5A, IB=0.1A VCE=10V,IC=100mA, f =1MHz IC=1A IB1=-IB2=0.2A MIN 700 400 9 TYP MAX Units V V V 100 50 10 20 40 3 0.8 1 4 0.7 4 µA µA µA V V V MHz µs µs Rank Range 20-25 25-30 30-35 35-40 WEITRON hpp://www.weitron.com.tw 1/3 10-Nov-2010 3DD13003B Typical Characteristics WEITRON hpp://www.weitron.com.tw 2/3 10-Nov-2010 3DD13003B TO-92 Outline Dimensions E unit:mm H TO-92 C J K G Dim A B C D E G H J K L M in Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A 3/3 10-Nov-2010