A1015

A1015 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* (TA=25°C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD TJ TSTG Value -50 -50 -5.0 -150 0.4 +150 -55 to + 150 Unit V V V mA W °C °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage, IC = -100µA, IE = 0 Collector-Emitter Breakdown Voltage, IC = -0.1mA, IB = 0 Emitter-Base Breakdown Voltage, IE = -100µA, IC = 0 Collector Cut-off Current, VCB = -50V, IE = 0 Collector Cut-off Current, VCE = -50V, IB = 0 Emitter Cut-off Current, VEB = -5.0V, IC = 0 V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO -50 -50 -5.0 -0.1 -0.1 -0.1 V V V µA µA µA WEITRON http://www.weitron.com.tw 1/4 14-Feb-06 A1015 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain VCE =-6.0V, I C =-2.0mA Collector-Emitter Saturation Voltage IC=-100mA, IB =-10mA Base-Emitter Voltage IC=-100mA, IB =-10mA TransitionFrequence VCE = -10V, IC = -1mA, f = 30MHz Collector Output Capacitance VCB = -10V, IE = 0, f = 1MHz Noise Figure VCE = -6V, I C = -0.1mA, Rg = 10kΩ, f = 1KMHz hFE1 VCE(sat) VBE(sat) fT Cob NF 70 400 -0.3 -1.1 6 - 19 - V V MHz pF dB 80 - CLASSIFICATION OF hFE1 Rank Range O 70-140 Y 120-240 GR 200-400 WEITRON http://www.weitron.com.tw 2/4 14-Feb-06 A1015 Typical Characteristics http://www.weitron.com.tw WEITRON 3/4 14-Feb-06 A1015 TO-92 Outline Dimensions E unit:mm C J K G Dim A B C D E G H J K L H TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270T YP 2.44 2.64 14.10 14.50 B L http://www.weitron.com.tw WEITRON D A 4/4 14-Feb-06