WEITRON
Surface Mount Schottky Barrier Diodes
P b Lead(Pb)-Free
B160W-40
SMALL SIGNAL SCHOTTKY DIODES 1000m AMPERES 40 VOLTS
1
2
SOD-123
SOD-123 Outline Dimensions
Unit:mm
SOD-123
Dim A B C D E H J K Min Max 2.55 2.85 1.40 1.80 0.95 1.35 0.50 0.70 0.30 REF 0.10 0.15 3.55 3.85
PIN 1. CATHODE 2. ANODE
WEITRON
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20-Jan-10
B160W-40
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Limits 40 1 30 150 -40-125 Unit V A A ℃ ℃
Electrical Ratings @TA=25℃
Parameter Symbol IF=1A VF Min. Typ. Max. 0.51 30 Unit V μA
Forward voltage
Reverse current
VR=40V
IR
Device Marking
B160W-40 = 74
WEITRON
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B160W-40
Typical Characteristics
10000 10000 1000 f=1MHz Ta=25°C
FORWARD CURRENT : IF (mA)
REVERSE CURRENT : IR (µA)
1000 100 10 1 0.1 0.01
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
1000 100 10 1 0.1
Ta= −25°C Ta=75°C
TERMINAL CAPACITANCE : CT (pF)
40 50
100
Ta=25°C
10
0.01
0.001
0
100
200
300
400
500
600
0.001
0
10
20
30
1
0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF (mV)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Forward Temperature Characteristics
Fig.2 Reverse Temperature Characteristics
Fig.3 Capacitance Between Terminals Characteristics
AVERAGE RECTIFIED FOWARD CURRENT : IO (A)
2.0 1.8 1.6
AVERAGE RECTIFIED FOWARD CURRENT : IO (A)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0
0A
2.0
DC D=1 / 2 Sin (θ=180)
DC
1.5
1.0
D =1 / 2 Sin (θ=180)
25
50
IO
R
75
100
125
150
AMBIENT TEMPERATURE : Ta (°C)
0V V Fig.4 Derating Curve (IO-Ta)
t T
0.5
0A 0V IO VR
t T
D=t / T VR=20V Tj=150°C
0.0
0
25
D=t / T VR=20V50 Tj=150°C
75
100
125
CASE TEMPERATURE : Tc (°C)
Fig.5 Derating Curve (IO-Tc)
WEITRON
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20-Jan-10
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