B5817W

B5817W

  • 厂商:

    WEITRON

  • 封装:

  • 描述:

    B5817W - Surface Mount Schottky Barrier Diodes - Weitron Technology

  • 详情介绍
  • 数据手册
  • 价格&库存
B5817W 数据手册
B5817W/B5819W Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 1.0 AMPERES 20-40 VOLTS Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-123 Package 1 Description: These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand held and portable applications where space is limited. 2 SOD-123 SOD-123 Outline Dimensions Unit:mm SOD-123 Dim A B C D E H J K Min Max 2.55 2.85 1.40 1.80 0.95 1.35 0.50 0.70 0.30 REF 0.10 0.15 3.55 3.85 PIN 1. CATHODE 2. ANODE WEITRON http://www.weitron.com.tw B5817W/B5819W Maximum Ratings Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimpose on rated load (JEDEC Method) Typical thermal Resistance junction to Ambient Note (1) Operating & Storage Temperature Range ( TA=25 C Unless otherwise noted) Symbol VRRM VRWM VR VR(RMS) IFAV IFSM R JA TJ TSTG B5817W 20 14 1.0 25 B5819W 40 28 Unit V V A A 244 -55 to +125 C/W C E lectr ical C har acter istics Characteristic Minimum Reverse Breakdown Voltage (2) (IR=500 A) Forward Voltage Note(2) IF=0.5A Tj=25 C IF=1.0A Tj=25 C Reverse Current Note(2) VR=20V, Tj=25 C VR=40V, Tj=25 C Junction Capacitance f=1MHZ, VR=10VDC ( T A =25 C Unles s otherwis e noted) Symbol V(BR)R B5817W 20 0.400 0.450 B5819W 40 0.450 0.550 Unit V VF V IR Cj 500 500 170 A PF Device Marking Item B5817W B5819W Marking BK , SJ BL , SL Eqivalent Circuit diagram 1 1 2 2 Note: 1. Valid provited that leads are kept at ambient tememperature. 2. Pulse Test : Pulse width = 300 s, Duty Cycle 2% WEITRON http://www.weitron.com.tw B5817W/B5819W 1.8 IO, AVERAGE RECITIFIED CURRENT (A) IF, INSTANTNEOUS FWD CURRENT (A) 10 B5819W B5817W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 TL, LEAD TEMPERATURE ( C) FIG, 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig, 2 Typical Forward Characterictics 1000 Cj , CAPACITANCE (pF) 100 10 1.0 0 5 10 15 20 VR.REVERSE VOLTAGE (V) Fig, 3 Typ, Junction Capacitance vs. Reverse Voltage WEITRON http://www.weitron.com.tw
B5817W
1. 物料型号: - B5817W/B5819W是表面贴装肖特基势垒二极管。

2. 器件简介: - 这些肖特基势垒二极管设计用于高速开关应用、电路保护和电压钳位。极低的正向电压降低了导通损耗,微型表面贴装封装非常适合空间受限的手提和便携应用。

3. 引脚分配: - PIN 1: 阴极(CATHODE) - PIN 2: 阳极(ANODE)

4. 参数特性: - 正向电压低,导通损耗非常小。 - 封装在SOD-123封装中。 - 反向电压峰值重复工作峰值反向电压分别为20V和40V。 - 额定负载下(JEDEC方法)非重复峰值正向浪涌电流为25A,脉冲宽度为8.3ms的单半正弦波叠加。 - 典型热阻(结到环境)为244°C/W。

5. 功能详解: - 器件用于高速开关,电路保护和电压钳位。 - 极低的正向电压有助于减少导通损耗。 - 微型表面贴装封装适合空间受限的应用。

6. 应用信息: - 适用于手持和便携设备,特别是在空间受限的情况下。

7. 封装信息: - SOD-123封装,具体尺寸如下: - A: 2.55mm至2.85mm - B: 1.40mm至1.80mm - C: 0.95mm至1.35mm - D: 0.50mm至0.70mm - E: 0.30mm(参考值) - H: 0.10mm - J: 0.15mm - K: 3.55mm至3.85mm
B5817W 价格&库存

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