BAS16TDW
Surface Mount Switching Multi-Chip Diode Array
P b Lead(Pb)-Free
MULTI-CHIP DIODES 150m AMPERES 75 VOLTS
Features: * Fast Switching Speed * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation
65 1
4
2
3
Mechanical Data: * Case : SOT-363 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram * Weight : 0.006 grams(appro)
SOT-363
SOT-363 Outline Dimensions
A
Unit:mm
SOT-363
4
6
5
BC
1 2 3
D
E
H K J L M
Dim A B C D E H J K L M
Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25
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Rev.A 20-Oct-09
BAS16TDW
Maximum Ratings@ TA= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current@ t = 1.0µs @ t = 1.0s Power Dissipation (Note 1) Thermal Resistant Junction to Ambient Air (Note 1) Operating Temperature Range Storage Temperature Range
Symbol
VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA Tj TSTG
Value
100 75 53 300 150 2.0 1.0 200 625 +150 -55 to +150
Unit
V V V mA mA A mW °C/W °C °C
Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2) IR = 100µA Forward Voltage (Note 2) IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Reverse Current (Note 2) VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V Total Capacitance VR = 0V, f = 1.0MHz Reverse Recovery Time IF= IR=10mA, Irr=0.1 x IR, RL=100
Symbol
V(BR)R
Min
75 -
Max
0.715 0.855 1.0 1.25 1.0 50 30 25 2.0 4.0
Unit
V
VF
V
IR
-
µA µA µA nA pF ns
CT Trr
-
Notes:2. Short duration test pulse used to minimize self-heating e ect.
WEITRON
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Rev.A 20-Oct-09
BAS16TDW
Device Marking
Item BAS16TDW MMBD4148TDW Marking
KA2
Eqivalent Circuit diagram
1 2 3 6 5 4
Typical Characteristics
100 10
I F , FORWARD CURRENT (mA)
T A = 150°C T A= 85°C
10
I R , REVERSE CURRENT (µA)
1.0
T A = 125°C
TA= – 40°C
0.1
T A = 85°C T A = 55°C
1.0
T A= 25°C
0.01
0.1 0.2 0.4 0.6 0.8 1.0 1.2
T A = 25°C
0.001 0 10 20 30 40 50
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
C D , DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52 0 2 4 6 8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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Rev.A 20-Oct-09
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