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BAS16TDW_09

BAS16TDW_09

  • 厂商:

    WEITRON

  • 封装:

  • 描述:

    BAS16TDW_09 - Surface Mount Switching Multi-Chip - Weitron Technology

  • 数据手册
  • 价格&库存
BAS16TDW_09 数据手册
BAS16TDW Surface Mount Switching Multi-Chip Diode Array P b Lead(Pb)-Free MULTI-CHIP DIODES 150m AMPERES 75 VOLTS Features: * Fast Switching Speed * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation 65 1 4 2 3 Mechanical Data: * Case : SOT-363 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram * Weight : 0.006 grams(appro) SOT-363 SOT-363 Outline Dimensions A Unit:mm SOT-363 4 6 5 BC 1 2 3 D E H K J L M Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 WEITRON http://www.weitron.com.tw 1/3 Rev.A 20-Oct-09 BAS16TDW Maximum Ratings@ TA= 25°C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current@ t = 1.0µs @ t = 1.0s Power Dissipation (Note 1) Thermal Resistant Junction to Ambient Air (Note 1) Operating Temperature Range Storage Temperature Range Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA Tj TSTG Value 100 75 53 300 150 2.0 1.0 200 625 +150 -55 to +150 Unit V V V mA mA A mW °C/W °C °C Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 2) IR = 100µA Forward Voltage (Note 2) IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Reverse Current (Note 2) VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V Total Capacitance VR = 0V, f = 1.0MHz Reverse Recovery Time IF= IR=10mA, Irr=0.1 x IR, RL=100 Symbol V(BR)R Min 75 - Max 0.715 0.855 1.0 1.25 1.0 50 30 25 2.0 4.0 Unit V VF V IR - µA µA µA nA pF ns CT Trr - Notes:2. Short duration test pulse used to minimize self-heating e ect. WEITRON http://www.weitron.com.tw 2/3 Rev.A 20-Oct-09 BAS16TDW Device Marking Item BAS16TDW MMBD4148TDW Marking KA2 Eqivalent Circuit diagram 1 2 3 6 5 4 Typical Characteristics 100 10 I F , FORWARD CURRENT (mA) T A = 150°C T A= 85°C 10 I R , REVERSE CURRENT (µA) 1.0 T A = 125°C TA= – 40°C 0.1 T A = 85°C T A = 55°C 1.0 T A= 25°C 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 T A = 25°C 0.001 0 10 20 30 40 50 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://www.weitron.com.tw WEITRON 3/3 Rev.A 20-Oct-09
BAS16TDW_09 价格&库存

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