BAV70

WEITRON Surface Mount Switching Diode Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-23 Package BAS16 / BAV70 BAW56 / BAV99 SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS 3 1 2 SOT-23 SOT-23 Outline Dimensions A Unit:mm TOP VIEW B C E G H D K L J M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 http://www.weitron.com.tw WEITRON BAS16 / BAV70 BAW56 / BAV99 Maximum Ratings (EACH DIODE) Characteristic Reverse Voltage Forward Current Peak Forward Surge Current Non-Repetitive Peak @ t=1.0us Forward Surge Current @ t=1.0s Symbol VR IF IFM IFSM BAS16 75 200 500 2.0 1.0 BAV70 BAW56 70 215 BAV99 Unit Volts mAdc mAdc Adc Thermal Characteristics Characteristic Total Device Dissipation FR-5 Board *1, TA=25 C Derate Above 25 C Thermal Resistance Junction to Ambient Symbol PD R qJA PD R qJA TJ, Tstg Max 225 1.8 556 300 2.4 417 -55 to + 150 Unit mW mW/ C C/W mW mW/ C C/W C Total Device Dissipation Alumina Substrate*2 TA=25 C Derate Above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature *1 ER-5=1.0x0.75x0.062 in *2 Alumina=0.4x0.3x0.024 in 99.5% Alumina Electrical Characteristics Characteristic (TA=25 C Unless Otherwise Note) (Each Diode) Symbol Min Max Unit Off Characteristics Reverse Breakdown Voltage BAS16 (IBR=100 µAdc ) BAV70/BAW56/BAV99 Reverse Voltage Leakage Current VR=75V VR=70V VR=25V, TJ=150 C VR=25V, TJ=150 C VR=75V, VR=70V, VR=70V, TJ=150 C TJ=150 C TJ=150 C BAS16 BAV70/BAW56/BAV99 BAS16/BAW56/BAV99 BAV70 BAS16 BAW56/BAV99 BAV70 VBR 75 70 1.0 2.5 Vdc IR 30.0 60.0 50.0 50.0 100.0 µAdc WEITRON http://www.weitron.com.tw BAS16 / BAV70 BAW56 / BAV99 Off Characteristic Characteristic Diode Capacition BAS16/BAW56 (VR=0, f=1.0MHz) BAV70/BAV99 Forward Voltage (IF=1.0 mAdc) (IF=10 mAdc) (IF=50 mAdc) (IF=150 mAdc) Reverse Recovery Time (Figure 1.) IF=IR=10 mAdc, VR=5.0Vdc IR(REC)=1.0 mAdc, RL=100 Symbol CD Min Max 2.0 1.5 715 855 1000 1250 6.0 Unit PF VF mVdc trr nS Device Marking Item BAS16 BAV70 BAW56 BAV99 Marking A6 A4 A1 A7 Eqivalent Circuit diagram 3 3 3 3 1 1 2 1 2 1 2 Figure 1. Recovery Time Equivalent Test Circuit 820 +10V 2.0K IF 0.1µF 100 µH D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR 0.1µF tr 10% tp t IF trr t 90% IR INPUT SIGNAL IR(REC)=1.0mA OUTPUT PULSE (IF=IR=10mA, MEASURED AT IR(REC)=1.0mA Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA 2. Input pules is adjusted so IR(peak) is equal to 10 mA 3. tp » trr http://www.weitron.com.tw WEITRON BAS16 / BAV70 BAW56 / BAV99 FIGURE 2 .FORWARD VOLTAGE 100 10 FIGURE 3. LEAKAGE CURRENT TA=150 C IA. REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) TA=85 C 10 TA=-40 C 1.0 TA=125 C 0.1 TA=85 C TA=25 C 1.0 TA=55 C 0.01 TA=25 C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 VR. REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) FIGURE 4. CAPACITANCE(BAS16) CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 0.68 1.00 FIGURE 5. CAPACITANCE (BAV70) 0.64 0.90 0.60 0.80 0.56 0.70 0.52 0 2 4 6 8 0.60 0 2 4 6 8 VR. REVERSE VOLTAGE (VOLTS) VR. REVERSW VOLTAGE (VOLTS) 1.75 FIGURE 6. CAPACITANCE(BAW56) CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 0.68 FIGUTRE 7. CAPACITANCE (BAV99) 1.50 0.64 1.25 0.60 1.00 0.56 0.75 0 2 4 6 8 0.52 0 2 4 6 8 VR. REVERSE VOLTAGE (VOLTS) VR. REVERSE VOLTAGE (VOLTS) WEITRON http://www.weitron.com.tw