BAV70T
Surface Mount Switching Diodes
P b Lead(Pb)-Free
Features:
* Ultra-Small Surface Mount Package * Fast switching Speed * For General Purpose Switching Applications * High Conductance
SWITCHING DIODES 200 mAMPERES 70 VOLTS
Mechanical Data:
* Polarity: See Diagrams Page.2 * Marking: See Diagrams Page.2 * Weight: 0.002 grams (approx)
SOT-523F(SC-89)
SOT-523F Outline Dimensions (SC-89)
Unit:mm
A
SC-89
3 T OP V IE W 2 1 K G D B S
M C J
N
Dim A B C D G J K M N S
Min 1.50 0.75 0.60 0.23 0.10 0.30 ----1.50
Nom 1.60 0.85 0.70 0.28 0.50BSC 0.15 0.40 ----1.60
Max 1.70 0.95 0.80 0.33 0.20 0.50 10 10 1.70
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BAV70T
Maximum Ratings
Characteristic
Reverse Voltage Forward Continuous Current Peak Forward Surge Current Total Device Dissipation FR–5 Board1 TA = 25°C Derate above 25°C Thermal Resistance Total Device Dissipation Alumina Substrate2 TA = 25°C Derate above 25°C Thermal Resistance Junction and Storage Temperature Range
( TA=25°C Unless otherwise noted)
Symbol
VR IO IFSM Pd RθJA Pd RθJA Tj,T STG
Value
70 200 0.5 225 1.8 555 300 2.9 345 -55 to + 150
Unit
V mA A mW mW/˚C ˚C/W mW
˚C/W °C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage IR=100µA Forward Voltage IF=1.0mA IF=10mA IF=50mA IF=150mA Total Capacitance VR=0V, f=1.0MHz Reverse Current VR=75V VR=50V
( TA=25˚C Unless othe rwise noted)
Symbol
V(BR)R
Min
70
Max
715 855 1000 1250 1.5 5.0 100 6.0 1.75
Unit
V
VF
-
mV
CT IR Trr VRF
-
PF µA nA nS V
Reverse Recover Time IF = IR = 10 mA, RL = 100 , IR(REC) = 1.0 mAFig.1 Forward Recovery Voltage IF = 10 mA, tr = 20 nsFig.2
-
Device Marking
Item
BAV70T
Marking
A4
Eqivalent Circuit diagram
3 1 2
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BAV70T
Electrical Characteristic curves(TA=25˚C)
Ω µ µ µ
Ω
Ω
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
Curves Applicable to Each Anode
° ° µ °
°
°
°
°
°
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Capacitance
WEITRON
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13-Apr-10
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