BC337/BC338
NPN General Purpose Transistor
P b Lead(Pb)-Free
BASE
1 3 2 2
COLLECTOR
1
TO-92
EMITTER
3
Maximum Ratings(TA=25°C unless otherwise noted)
Rating
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector Current Continuous Total Device Dissipation Alumina Substrate,TA=25°C Operating Junction Temperature Range Storage Junction Temperature Range
Symbol
VCBO VCEO VEBO lC PD TJ Tstg
BC337
50 45 5.0 800
625
BC338
30 25 5.0
Unit
V V V mA mW/°C °C °C
-55 to +150 -55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage IC=100µA, I E=0 Collector-Emitter Breakdown Voltage IC=10mA, I B=0 Emitter-Base Breakdown Voltage IC=10µA, IC=0 BC337 BC338 BC337 BC338 BC337 BC338 V(BR)CBO 50 30 45 25 5.0 V
V(BR)CEO
-
-
V Vdc
V(BR)EBO
-
-
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30-Jun-06
BC337/BC338
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) (Countinued) Min Typ Characteristics Symbol OFF CHARACTERISTICS
Collector Cut-off Current VCE=40V, l B=0 VCE=20V, l B=0 Collector Cut-off Current VCB=45V, l E=0 VCB=25V, l E=0 Emitter Cutoff Current VEB=4.0V, l C=0 BC337 BC338 BC337 BC338 lCEO lCBO lEBO 0.2 0.1 0.1 µA
Max
Unit
µA µA
ON CHARACTERISTICS
DC Current Gain VCE=1V, l C=100mA VCE=1V, l C=300mA Collector-Emitter Saturation Voltage lC=500mA, l B=50mA Base-Emitter Saturation Voltage lC=500mA, l B=50mA Transition frequency VCE=5V, l C=10mA, f=100MHz
hFE1 hFE2
VCE(sat) VBE(sat) fT
100 60 -
-
630 -
-
-
0.7 1.2
V V MHz
210
-
hFE Classification
Classification
hFE1 hFE2
16
100 ~ 250 60-
25
160 ~ 400 100-
40
250 ~ 630 170-
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BC327/BC328
Typical Characteristics
-500 -20
mA - 5.0 A I B = - 4.5m = mA IB - 4.0 A I B = - 3.5m A = 3.0m IB A I B = - 2.5m A IB = 2.0m =IB
IC mA , COLLECTOR CURRENT
IC mA , COLLECTOR CURRENT
IB=
-400 -300 -200 -100 -0
-16 -12 -8 -4
µA - 80 µA - 70 IB= µA - 60 IB=
IB=
P
T
µA - 50
IB= - 40
=6 00 mW
µA
30µA
IB =
IB = - 1.0m A IB = - 0.5m A
mA - 1.5
PT = 60 0m
IB = -
W
0µA IB = - 2
IB = 0
IB = - 10µA
-1
-2
-3
-4
-5
-10
-20
-30
IB = 0
-40
-50
VCE(V), COLLECTOR-EMITTER VOLTAGE
VCE(V), COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Fig.2 Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
-1 0
P U LS E
hFE, DC CURRENT GAIN
V CE = - 2.0V
IC = 10 IB PULSE
V CE(sat)
100
- 1.0V
-1
10
-0 . 1
V BE(sat)
1
-0.1
-1
-10
-100
-1000
-0 . 0 1 -0.1
-1
-10
-100
-1000
IC(mA), CO LLECTO R CURRENT
IC(mA), COLLECTOR CURRENT
Figure 3. DC current Gain
Fig.4 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
fT[MHz], GAIN-BANDWIDTH PRODUCT
-1000
1000
IC[mA], COLLECTOR CURRENT
-100
VC E = -1V PULSE
VC E = -5.0V
-10
100
-1
-0.1 -0.4
-0.5
-0.6
-0.7
-0.8
-0.9
10 -1
-10
-100
VBE[V], BASE-E MITTE R VO LTAG E
IC[m A], CO LLECTO R CURRENT
Fig.5 Base-Emitter On Voltage
Fig.6 Gain Bandwidth Product
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WEITRON
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29-Jun-06
BC337/BC338
TO-92 Outline Dimensions
E
unit:mm
C
J K
G
Dim A B C D E G H J K L
TO-92
Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
H
B
L
WEITRON
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D
A
3/3
30-Jun-06
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