BC556, A / B BC557, A / B / C BC558, A / B / C
PNP General Purpose Transistor
2 BASE
COLLECTOR 3
TO-92
1 1 EMITTER 2 3
Maximum Ratings ( TA=25℃ unless otherwise noted) C
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
Symbol
VECO V CBO VEBO lC
BC556 -65 -80 -5
BC557 -45 -50 -5 100
BC558 -30 -30 -5
Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristics Total Device Dissipation Alumina Substrate, TA = 25℃ C BC556 BC557 BC558 BC556 BC557 BC558 Symbol PD Max 625 Unit mW/ ℃ C
Junction and Storage, Temperature
TJ, Tstg
-55 to +150
℃ C
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (lC = 2 mAdc. lB =0) Collector-Base Breakdown Voltage (lC = 100 mAdc. lE =0) Emitter-Base Breakdown Voltage (lE = 100 mAdc. lC=0)
BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558
V(BR)CEO
-65 -45 -30 -80 -50 -30
Vdc
V(BR)CBO
Vdc
V(BR)EBO
-5
Vdc
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ELECTRICAL CHARACTERISTICS ( TA=25℃unless otherwise noted) (Countinued) C
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE=-60V, lB=0) (VCE=-40V, lB=0) (VCE=-25V, lB=0)
BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558
lCEO
-0.1
mA
Collector Cutoff Current
(VCB=-70V, lE=0) (VCB=-45V, lE=0) (VCB=-25V, lE=0)
lCBO
-0.1
mA
Emitter Cutoff Current
(VEB =-5.0 Vdc, lC =0)
lEBO
-0.1
mA
ON CHARACTERISTICS
DC current gain
(VCE=-5V, lc=-2mA)
BC556 BC557 BC558 BC556A/BC557A/BC558A BC556B/BC557B/BC558B BC557C/BC558C
120 120 120 120 180 420
500 800 800 220 460 800 -0.3
hFE
Collector-emitter saturation voltage
(lC=-100mA, lB=-5mA)
VCE(sat) VBE(sat)
fT
-
V V MHz
Base-emitter saturation voltage
(lC=-100mA, lB=-5mA)
-
-1
Transition frequency
(VCE=-5V, lC=-10mA, f=100MHz)
150
-
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C,CAPACITANCE(pF)
VCE,COLLECTOR-EMITTER VOLTAGE(V)
hFE,NORMALIZED DC CURRENT GAIN
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TO-92 Outline Dimensions
E
unit:mm
C
J K
G
Dim A B C D E G H J K L
H
TO-92
Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
B
L
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