BC807-16/ BC807-25 BC807-40
General Purpose Transistor PNP Silicon
Maximum Ratings ( TA=25 C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol V CEO VCBO VEBO IC
COLLECTOR 3
MARKING DIAGRAM 3
1 BASE 2 EMITTER
1 2 SOT-23
Value -45 -50 -5.0 500
Unit V V V mAdc
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R qJA PD R qJA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C
Device Marking
BC807-17=5A, BC807-25=5B, BC807-40=5C 1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
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BC807-16/BC807-25 BC807-40
W E IT R ON
(TA=25 C Unless Otherwise noted) Symbol Min Typ Max Unit
Electrical Characteristics Off Characteristics
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10mA) Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=0) Emitter-Base Breakdown Voltage (IE=-1.0 µA) Collector Cutoff Current (VCB=20V) (VCB=20V, TA=150 C)
V(BR)CEO V(BR)CES V(BR)EBO ICBO
-45 -50 -5.0 -
-
100 5.0
V V V nA mA
Electrical Characteristics
(TA=25 C Unless Otherwise noted) Symbol Min Typ Max Unit
Characteristics
On Characteristics
DC Current Gain (IC= -100mA, VCE=-1.0V) BC807-16 BC807-25 BC807-40 hFE 100 160 250 40 VCE(sat) VBE(on) 250 400 600 -0.7 -1.2 -
(IC= -500mA,VCE=-1.0V) Collector-Emitter Saturation Voltage (IC= -500mA, IB=50mA) Base-Emitter On Voltage (IC= -500mA, IB=-1.0V)
V
V
Small-signal Characteristics
Current-Gain-Bandwidth Product (IC= -10mA, VCE= -5.0VDC, f=100MHz) Output Capacitance (VCB= -10V, f=1.0MHz) fT Cobo 100 10 MHz pF
WEITRON
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BC807-16/BC807-25 BC807-40
1000 h FE , DC CURRENT GAIN VCE = -1.0 V TA = 25 C
100
10 -0.1
-1.0 -10 -100 IC , COLLECT OR CURRENT (mA)
-1000
Figure 1. DC Current Gain
VCE , COLLECT OR-EMITTER VOLTAGE (VOL TS )
-1.0 TJ = 25 C V, VOLTAGE (VOLTS) -0.8 IC = -500 mA
-1.0 TA = 25 C -0.8 VBE(sat) @ I C/IB = 10 VBE(on) @ V CE = -1.0 V -0.6
-0.6 -0.4 IC = -300 mA -0.2 0 -0.01 IC = -10 mA -0.1 -1.0 -10 IB , BASE CURRENT (mA) IC = -100 mA
-0.4
-0.2 VCE( sat) @ I C/IB = 10 -100 0 -1.0 -10 -100 IC , COLLECTOR CURRENT (mA) -1000
Figure 2. Saturation Region
Figure 3. "On" Voltages
q V , TEMPERA TURE COEFFICIENTS (mV/ C)
+1.0 VC for VCE(sat) C, CAPACIT ANCE (pF)
100
0
-1.0
-2.0
VB for VBE
-1.0
Figure 4. T emperature Coefficients
WEITRON
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q q
Cib 10
Cob
-10 -100 IC , COLLECTOR CURRENT
-1000
1.0 -0.1
-1.0 -10 VR , REVERSE VOLTAGE (VOLTS)
-100
Figure 5. Capacitances
BC807-16/BC807-25 BC807-40
SOT-23 Package Outline Dimension
S OT -23
A
TOP VIEW D E G H
B
C
K J L M
Dim A B C D E G H J K L M
Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076
Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25
WEITRON
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