BC807-25W

BC807-16W BC807-25W BC807-40W General Purpose Transistor PNP Silicon P b Lead(Pb)-Free 1 BASE COLLECTOR 3 3 1 2 2 EMITTER SOT-323(SC-70) MaximumRatings (TA=25°Cunless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation FR-5 Board(1) TA=25°C Thermal Resistance, Junctionto Ambient(1) Junction Temperature Range Storage Temperature Range VCEO VCBO VEBO IC PD RθJA TJ Tstg -45 -50 -5.0 500 150 833 -55 to +150 -55 to +150 V V V mA mW °C/W °C °C Device Marking BC807-16W = 5A , BC807-25W = 5B , BC807-40W = 5C 1. FR-5 = 1.0 x 0.75 x 0.062 in. WEITRON http://www.weitron.com.tw 1/3 25-Nov-08 BC807-16W BC807-25W BC807-40W WEITRON Symbol Min Typ Max Unit Electrical Characteristics(TA=25ºC Unless Otherwise noted) Characteristics Off Characteristics Collector-Emitter Breakdown Voltage IC=-10mA Collector-Base Breakdown Voltage IC=-10µA Emitter-Base Breakdown Voltage IE=-1.0µA VCB=-20V VCE =-20V VEB =-5V V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICBO ICBO -45 -50 -5.0 -0.1 -0.2 -0.1 V V V µA µA µA On Characteristics DC Current Gain IC=-100mA, VCE=-1.0V BC807-16W BC807-25W BC807-40W 100 160 250 40 VCE(sat) VBE(on) 250 400 600 -0.7 -1.2 V V hFE - IC=-500mA,VCE=-1.0V) Collector-Emitter Saturation Voltage IC=-500mA, IB=-50mA Base-Emitter On Voltage IC=-500mA, VCE=-1.0V Small-signal Characteristics Current-Gain-Band width Product IC=-10mA, VCE=-5.0V, f=100MHz Output Capacitance VCB=-10V,f=1.0MHz fT Cob 80 10 MHz pF WEITRON http://www.weitron.com.tw 2/3 25-Nov-08 BC807-16W BC807-25W BC807-40W WEITRON SOT-323 Outline Demensions Unit:mm A TOP VIEW D E G H B C K L J M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw 3/3 25-Nov-08