BC846BW

BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor NPN Silicon P b Lead(Pb)-Free 1 BASE COLLECTOR 3 3 1 2 2 EMITTER SOT-323(SC-70) Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 Symbol V CEO Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Unit V Collector-Base Voltage VCBO V Emitter-Base Voltage VEBO IC V mA Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (Note.1) TA=25°C Derate above 25°C Thermal Resistance, Junctionto Ambient (Note.1) Junctionand Temperature Range Storage Temperature Range Symbol PD RθJA TJ Tstg Max 150 2.4 833 +150 -55 to +150 Unit mW mW/°C °C/W °C °C Device Marking BC846AW=1A; BC846BW=1B; BC847AW=1E; BC847BW=1F BC847CW=1G; BC848AW=1J; BC848BW;=1K; BC848CW=1L 1. FR-5=1.0 x 0.75 x 0.062 in. WE ITR O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/4 Rev.B 12-Dec-06 BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW WEITRON Symbol Min Typ Max Unit Electrical Characteristics (TA=25°C Unless Otherwise noted) Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (IC=10mA) Collector-Emitter Breakdown Voltage (IC=10μA,VEB=0) Collector-Base Breakdown Voltage (IC=10μA) Emitter-Base Breakdown Voltage (IE=1.0μA) Collector Cutoff Current (VCB=30V) (VCB=30V, TA=150°C) BC846A Series BC847A Series BC848A Series BC846A Series BC847A Series BC848A Series BC846A Series BC847A Series BC848A Series BC846A Series BC847A Series BC848A Series V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 15 5.0 V V(BR)CES V V(BR)CBO V V(BR)EBO V nA mA ICBO On Characteristics DC Current Gain (IC=10uA, VCE=5.0V) (IC=2.0mA, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C, hFE 110 200 420 580 90 150 270 180 290 520 -0.7 -0.9 660 220 450 800 0.25 0.6 700 770 - Collector-Emitter Saturation Voltage (IC=10mA, IB=0.5mA) (IC=100mA, IB=5.0mA) Base-Emitter Saturation Voltage (IC=10mA,IB=0.5mA) (IC=100mA,IB=5.0mA) Base-Emitter On Voltage (IC=2.0mA,VCE=5.0V) (IC=10mA,VCE=5.0V) VCE(sat) V VBE(sat) V VBE(on) V Small-signal Characteristics Current-Gain-Bandwidth Product (IC=10mA, VCE=5.0V, f=100MHz) Output Capacitance (VCB=10V, f=1.0MHz) Noise Figure (IC=0.2mA, VCE=5.0V, Rs=2.0kΩ, f=1.0kHz, BW=200Hz) BC846A,B BC847A,B BC848A,B BC847C, BC848C fT Cobo 100 4.5 MHz pF NF - - 10 4.0 dB W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 2/4 Rev.B 12-Dec-06 BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW WEITRON BC847 & BC848 Series 1.0 VCE=1 0 V TA=2 5 C 0.9 V, VOLTAGE (VOLTS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 VCE(s at)@IC/ B C=1 0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 TA=2 5 C VBE(s at)@IC/ B C=1 0 VBE(ON)@VCE= 1 0 V hFE,NORMALIZED DC CURRENT GAIN 2.0 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mAdc) Figure1.Normalized DC Current Gain IC, COLLECTOR CURRENT (mAdc) Firure2. "Saturation" And "On" Voltage qVB, TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR- EMITTER VOLTAGE (V) 2.0 1.0 1.2 1.6 2.0 2.4 2.8 -5 5 C to +1 2 5 C TA=2 5 C 1.6 IC= 2 0 0 mA 1.2 IC= 1 0 mA IC= 1 0 0 mA 0.8 IC=-5 0 mA IC= 2 0 mA 0.4 0 0.02 0.1 1.0 10 20 0.2 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. Base-Emitter Temperature Coefficient 10 7.0 C,CAPACITANCE (pF) 5.0 Cib TA=2 5 C fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) 400 300 200 VCE=1 0 V TA= 2 5 C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 3.0 2.0 Cob 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances IC, COLLECTOR CURRENT (mAdc) Figure 6. Current-Gain- Bandwidth Product W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 3/4 Rev.B 12-Dec-06 BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW WEITRON BC846 Series 1.0 TA=2 5 C 0.8 VBE(s at) @IC/ IB =1 0 V,Voltage (Volts) 0.6 0.4 0.2 VCE(s at) @IC/ IB =1 0 0 VBE@VCE=-5 .0 V hFE, DC CURRENT GAIN (NORAMALIZED) VCE=5 V TA=2 5 C 2.0 1.0 0.5 0.2 0.1 0.2 1.0 10 100 IC, COLLECTOR CURRENT (mA) 0.2 0.5 Figure 7.DC Current Gain 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT(mA) 100 200 Figure 8. "ON" Voltage VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TA=2 5 C 1.6 2 0 mA 5 0 mA 1 0 0 mA 2 0 0 mA qVB TEMPERATURE COEFFICIENT (mV/ C) 2.0 1.0 1.4 1.2 1.8 q VB for VBE -5 5 C to 1 2 5 C 0.8 2.2 0.4 IC= 1 0 mA 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 2.6 0 0.02 3.3 0.2 0.5 1.0 -2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient 40 TA=2 5 C Cib 10 8.0 6.0 4.0 2.0 0.1 Cob fT, CURRENT-GAIN-BANDWIDTH PRODUCT 500 VCE=5 .0 V TA=2 5 C C. CAPACTIANCE (pF) 20 200 100 50 20 1.0 5.0 10 50 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance Figure 12.Current-Gain-Bandwidth Product IC, COLLECTOR CURRENT (mA) W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 4/4 Rev.B 12-Dec-06