BC847BT

BC847AT/BT/CT General Purpose Transistor NPN Silicon COLLECTOR 3 1 3 3 2 1 BASE 2 EMITTER SC-89 (SOT-523F) M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 45 50 6.0 100 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range Symbol PD R JA TJ,Tstg Max 150 2.4 833 -55 to +150 Unit mW mW/ C C/W C Device Marking BC847A=1E; BC847B=1F;BC847C=1G 1.FR-5=1.0 x 0.75 x 0.062 in. WE ITR O N http://www.weitron.com.tw BC847AT/BT/CT Electrical Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (IC= 10mA) Collector-Emitter Breakdown Voltage (IC=10 uA ,VEB=0) Collector-Base Breakdown Voltage (IC=10 uA) Emitter-Base Breakdown Voltage (IE=1.0 uA) Collector Cutoff Current (VCB=30V) ( VCB=30V, TA=150 C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 45 50 50 6.0 - WE IT R ON (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit - V V V V nA mA - 15 5.0 On Characteristics DC Current Gain (IC= 10uA, VCE=5.0V) (IC= 2.0mA, VCE=5.0V) BC847A BC847B BC847C BC847A BC847B BC847C hFE 110 200 420 90 150 270 180 290 520 0.7 0.9 660 - 220 450 800 0.25 0.6 700 770 - Collector-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) Base-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) Base-Emitter On Voltage (IC= 2.0mA, VCE=5.0V) (IC= 10mA, VCE=5.0V) VCE(sat) 580 - V VBE(sat) V VBE(on) V Small-signal Characteristics Current-Gain-Bandwidth Product (IC= 10mA, VCE= 5.0Vdc, f=100MHz) Output Capacitance ( VCB= 10V, f=1.0MHz) Noise Figure (IC= 0.2mA, VCE= 5.0Vdc, Rs=2.0 k , f=1.0 kHz, BW=200Hz) fT Cobo NF 10 100 4.5 MHz pF dB WEITRON http://www.weitron.com.tw BC847AT/BT/CT W E IT R ON 1.0 VCE=10V TA=25 C 0.9 V, VOLTAGE (VOLTS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat)@IC/BC=10 TA=25 C VBE(sat)@IC/BC=10 VBE(ON)@VCE= 10V hFE,NORMALIZED DC CURRENT GAIN 2.0 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mAdc) FIG.1 Normalized DC Current Gain IC, COLLECTOR CURRENT (mAdc) FIG.2 "Saturation" And "On" Voltage qVB, TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR- EMITTER VOLTAGE (V) 2.0 1.0 1.2 1.6 2.0 2.4 2.8 -55 C to +125 C TA=25 C 1.6 IC= 200mA 1.2 0.8 IC= 10mA IC= 20mA IC=-50mA IC= 100mA 0.4 0 0.02 0.1 1.0 10 20 0.2 IB, BASE CURRENT (mA) FIG.3 Collector Saturation Region 1.0 10 IC, COLLECTOR CURRENT (mA) 100 FIG.4 Base-Emitter Temperature Coefficient 10 7.0 C,CAPACITANCE (pF) 5.0 Cib TA=25 C fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) 400 300 200 VCE=10V TA= 25 C 100 80 60 40 30 20 0.5 0.7 1.0 3.0 2.0 Cob 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) FIG.5 Capacitances FIG.6 Current-Gain- Bandwidth Product WEITRON http://www.weitron.com.tw BC847AT/BT/CT SC-89 Outline Demensions W E IT R ON Unit:mm A SC-89 3 T OP V IE W 2 1 K G D B S M C J N Dim A B C D G J K M N S Min 1.50 0.75 0.60 0.23 0.10 0.30 ----1.50 Nom 1.60 0.85 0.70 0.28 0.50BSC 0.15 0.40 ----1.60 Max 1.70 0.95 0.80 0.33 0.20 0.50 10 10 1.70 WEITRON http://www.weitron.com.tw