BC847S

BC847S Dual General Purpose Transistor NPN Silicon P b Lead(Pb)-Free 4 5 6 3 2 1 65 4 1 2 3 SOT -363(SC-88) Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC NPN+NPN Value 45 50 6 200 Unit V V V mA Thermal Characteristics Characteristics Total Device Dissipation TA=25 C Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 +150 -55 to +150 Unit mW °C °C Device Marking BC847S=1C Electrical Characteristics Off Characteristics ( TA=25 C Unless Otherwise noted) Symbol Min Max Unit Characteristics Collector-Emitter Breakdown Voltage (IC=10mA , I B=0) Collector-Base Breakdown Voltage (IC=10 µA ,IE=0) Emitter-Base Breakdown Voltage (IE=10 µA , IC=0) V(BR)CEO V(BR)CBO V(BR)EBO 45 50 6 - V V V http://www.weitron.com.tw WEITRON 1/3 05-Feb-07 BC847S Electrical Characteristics ( T A= 2 5 C unles s other wi s e noted ) ( C ounti nued ) Characteristics Symbol Min TYP Max Unit On Characteristics D C C ur r ent G a in ( I C= 2 mA , VC E = 5 V ) hFE VCE(sat) 110 - 630 0.25 0.65 0.7 0.77 - C ollector-Emitter S aturation Voltage ( I C= 10 mA , I B = 0. 5mA ) ( I C= 100mA , I B = 5 mA ) B ase-Emitter ( VC E = 5 V ( VC E = 5 V - V S aturation Voltage , IC = 2 mA ) , IC = 10 mA) VB E(sat) V Small-signal Characteristics Current-Gain-B andwidth Product ( VC E = 5 V , IC = 20 mA , f=100MHz) Output Capacitance (VC B = 10 V , IE =0 , f=1 MHz) fT Cobo 200 2 MHz pF http://www.weitron.com.tw WEITRON 2/3 05-Feb-07 BC847S SOT-363 Package Outline Dimensions A U n it : m m SOT-363 4 6 5 BC 1 2 3 D E H K J L M Dim A B C D E H J K L M M in M ax 0.10 0.30 1.15 1.35 2.00 2.20 0.65 R EF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 http://www.weitron.com.tw WEITRON 3/3 05-Feb-07