BC848BW

BC846AW/BW/CW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 2 1 BASE 2 EMITTER SOT-323(SC-70) M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 Symbol VCEO Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Unit Vdc Collector-Base Voltage VCBO VEBO Vdc Emitter-Base VOltage Vdc Collector Current-Continuous IC mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (Note 1.) Junction and Storage, Temperature Range Symbol PD R qJA TJ,Tstg Max 150 2.4 833 -55 to +150 Unit mW mW/ C C/W C Device Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L; 1.FR-5=1.0 x 0.75 x 0.062 in. WE ITR O N http://www.weitron.com.tw BC846AW/BW/CW BC847AW/BW/CW BC848AW/BW/CW WE IT R ON (TA=25 C Unless Otherwise noted) Electrical Characteristics Off Characteristics Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage BC846A Series BC847A Series (IC= 10mA) BC848A Series Collector-Emitter Breakdown Voltage BC846A Series (IC=10 uA ,VEB=0) BC847A Series BC848A Series Collector-Base Breakdown Voltage (IC=10 uA) Emitter-Base Breakdown Voltage (IE=1.0 uA) BC846A Series BC847A Series BC848A Series BC846A Series BC847A Series BC848A Series V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 - - 15 5.0 V V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB=30V) (VCB=30V, TA=150 C) ICBO nA mA On Characteristics DC Current Gain (IC= 10uA, VCE=5.0V) (IC= 2.0mA, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C hFE 110 200 420 580 90 150 270 180 290 520 -0.7 -0.9 660 220 450 800 0.25 0.6 700 770 - BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C, Collector-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) Base-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) Base-Emitter On Voltage (IC= 2.0mA, VCE=5.0V) (IC= 10mA, VCE=5.0V) VCE(sat) V VBE(sat) V VBE(on) V Small-signal Characteristics Current-Gain-Bandwidth Product (IC= 10mA, VCE= 5.0Vdc, f=100MHz) Output Capacitance (VCB= 10V, f=1.0MHz) Noise Figure (IC= 0.2mA, VCE= 5.0Vdc, BC846A,B, BC847A,B,C, BC848A,B,C, Rs=2.0 k Ω , f=1.0 kHz, BW=200Hz) fT Cobo NF 10 100 4.5 MHz pF dB WEITRON http://www.weitron.com.tw BC846AW/BW/CW BC847AW/BW/CW BC848AW/BW/CW W E IT R ON BC847 & BC848 Series 1.0 VCE=10V TA=25 C 0.9 V, VOLTAGE (VOLTS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat)@IC/BC=10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 TA=25 C VBE(sat)@IC/BC=10 VBE(ON)@VCE= 10V hFE,NORMALIZED DC CURRENT GAIN 2.0 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0 0.1 IC, COLLECTOR CURRENT (mAdc) Figure1.Normalized DC Current Gain IC, COLLECTOR CURRENT (mAdc) Firure2. "Saturation" And "On" Voltage qVB, TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR- EMITTER VOLTAGE (V) 2.0 1.0 1.2 1.6 2.0 2.4 2.8 -55 C to +125 C TA=25 C 1.6 IC= 200mA 1.2 IC= 10mA IC= 100mA 0.8 IC=-50mA IC= 20mA 0.4 0 0.02 0.1 1.0 10 20 0.2 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. Base-Emitter Temperature Coefficient 10 7.0 C,CAPACITANCE (pF) 5.0 Cib TA=25 C fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) 400 300 200 VCE=10V TA= 25 C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 3.0 2.0 Cob 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances IC, COLLECTOR CURRENT (mAdc) Figure 6. Current-Gain- Bandwidth Product WEITRON http://www.weitron.com.tw BC846AW/BW/CW BC847AW/BW/CW BC878AW/BW/CW W E IT R ON BC846 Series 1.0 TA=25 C 0.8 VBE(sat)@IC/IB=10 V,Voltage (Volts) 0.6 0.4 0.2 VCE(sat)@IC/IB=10 0 VBE@VCE=-5.0V hFE, DC CURRENT GAIN (NORAMALIZED) VCE=5V TA=25 C 2.0 1.0 0.5 0.2 0.1 0.2 1.0 10 100 IC, COLLECTOR CURRENT (mA) 0.2 0.5 Figure 7.DC Current Gain 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT(mA) 100 200 Figure 8. "ON" Voltage VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TA=25 C 1.6 20mA 50mA 100mA 200mA qVB TEMPERATURE COEFFICIENT (mV/ C) 2.0 1.0 1.4 1.2 1.8 qVB for VBE -55 C to 125 C 0.8 2.2 0.4 IC= 10mA 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 2.6 0 0.02 3.3 0.2 0.5 1.0 -2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient 40 TA=25 C Cib 10 8.0 6.0 4.0 2.0 0.1 Cob fT, CURRENT-GAIN-BANDWIDTH PRODUCT 500 VCE=5.0V TA=25 C C. CAPACTIANCE (pF) 20 200 100 50 20 1.0 5.0 10 50 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance Figure 12.Current-Gain-Bandwidth Product IC, COLLECTOR CURRENT (mA) http://www.weitron.com.tw WEITRON