BC857A

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 3 1 2 SOT-23 MARKING DIAGRAM 3 1 BASE 2 EMITTER 1 XX = Device Code (See 2 Table Below) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage BC856 BC857 BC858,BC859 BC856 BC857 BC858,BC859 Symbol VCEO Value -65 -45 -30 -80 -50 -30 -5.0 -100 Max 225 1.8 556 300 2.4 417 -55 to +150 Unit V Collector-Base Voltage VCBO VEBO IC Symbol PD R θJA PD R θJA TJ,Tstg V V mAdc Unit mW mW/ C C/W mW mW/ C C/W C Emitter-Base VOltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature 1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. Electrical Characteristics Off Characteristics Collector-Emitter Breakdown Voltage (IC= -10mA) Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=0) Collector-Base Breakdown Voltage (IC=-10 µA) Emitter-Base Breakdown Voltage (IE=-1.0 µA) (TA=25 C Unless Otherwise noted) Symbol Characteristics Min Typ Max Unit BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series V(BR)CEO -65 -45 -30 -80 -50 -30 -80 -50 -30 -5.0 -5.0 -5.0 - - -15 -4.0 V V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB=-30V) ( VCB=-30V, TA=150 C) ICBO nA mA WEITRON http://www.weitron.com.tw 1/4 Rev A 12-Apr-05 BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C W E IT R ON (TA=25 C Unless Otherwise noted) Symbol Min Typ Max Unit Electrical Characteristics On Characteristics DC Current Gain (IC= -10uA, VCE=-5.0V) Characteristics (IC= -2.0mA,VCE=-5.0V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C hFE 125 220 420 -0.6 - 90 150 270 180 290 520 -0.7 -0.9 - 250 475 800 -0.3 -0.65 -0.75 -0.82 - Collector-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) Base-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) Base-Emitter On Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) VCE(sat) V VBE(sat) V VBE(on) V Small-signal Characteristics Current-Gain-Bandwidth Product (IC= -10mA, VCE= -5.0VDC, f=100MHz) Output Capacitance ( VCB= -10V, f=1.0MHz) Noise Figure (IC= -0.2mA, VCE= -5.0Vdc, Rs=2.0k Ω , f=1.0kHz, BW=200Hz) BC856, BC857, BC858 Series BC859, Series fT Cobo NF 10 4.0 100 4.5 MHz pF dB Device Marking BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C WEITRON http://www.weitron.com.tw 2/4 Rev A 12-Apr-05 BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C W E IT R ON BC857/BC858/BC859 Series -1.0 -0.9 V, VOLTAGE (VOLTS) TA=25 C VBE(sat)@IC/BC=10 hFE,NORMALIZED DC CURRENT GAIN 2.0 1.5 1.0 0.7 0.5 VCE=10V TA=25 C -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 VBE(ON)@VCE= -10V 0.3 0.2 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 0 -0.1 -0.2 VCE(sat)@IC/BC=10 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure1.Normalized DC Current Gain Firure2. "Saturation" And "On" Voltage VCE, COLLECTOR- EMITTER VOLTAGE (V) qVB, TEMPERATURE COEFFICIENT (mV/ C) -2.0 TA=25 C -1.6 1.0 -55 C to +125 C 1.2 1.6 2.0 2.4 2.8 -1.2 IC= -10mA IC= -20mA -0.4 IC= -50mA IC= -200mA -0.8 IC= -100mA 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -1.0 -10 IC, COLLECTOR CURRENT (mA) -100 Figure 3. Collector Saturation Region Figure 4. Base-Emitter Temperature Coefficient 10 Cib 7.0 C,CAPACITANCE (pF) 5.0 Cob TA=25 C fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) 400 300 200 150 100 80 60 40 30 20 -0.5 VCE= -10V TA= 25 C 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain- Bandwidth Product WEITRON http://www.weitron.com.tw 3/4 Rev A 12-Apr-05 BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C WE IT R ON BC856 Series -1.0 hFE,DC CURRENT GAIN (NORMALIZED) VCE= -5.0V TA= 25 C V,Voltage (Volts) 2.0 1.0 0.5 TJ=25 C -0.8 VBE(sat)@IC/IB=10 -0.6 VBE@VCE=-5.0V -0.4 0.2 -0.2 VCE(sat)@IC/IB=10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT(mA) Figure 7. DC Current Gain Figure 8. "ON" Voltage VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 qVB TEMPERATURE COEFFICIENT (mV/= C) -1.0 -1.6 IC= -10mA -20mA -50mA -100mA -200mA -1.4 -1.2 -1.8 qVB for VBE -55 C to 125 C -0.8 -2.2 -0.4 TJ=25 C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -2.6 -3.3 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient 40 TJ=25 C 20 Cib fT, CURRENT-GAIN-BANDWIDTH PRODUCT 500 VCE=-5.0V C. CAPACTIANCE (pF) 200 100 50 10 8.0 6.0 4.0 Cob 20 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12.Current-Gain-Bandwidth Product WEITRON http://www.weitron.com.tw 4/4 Rev A 12-Apr-05