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BC857AW

BC857AW

  • 厂商:

    WEITRON

  • 封装:

  • 描述:

    BC857AW - General Purpose Transistor PNP Silicon - Weitron Technology

  • 数据手册
  • 价格&库存
BC857AW 数据手册
BC856AW/BW BC857AW/BW BC858AW/BW/CW General Purpose Transistor PNP Silicon P b Lead(Pb)-Free 1 BASE COLLECTOR 3 3 1 2 2 EMITTER SOT-323(SC-70) MaximumRatings (TA=25°Cunless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage BC856 BC857 BC858 BC856 BC857 BC858 BC856 BC857 BC858 VCEO -65 -45 -30 -80 -50 -30 -5.0 -5.0 -5.0 100 150 833 -55 to +150 -55 to +150 V Collector-Base Voltage VCBO V Emitter-Base Voltage VEBO IC PD RθJA TJ Tstg V Collector Current-Continuous Total Device Dissipation FR-5 Board(1) TA=25°C Thermal Resistance, Junctionto Ambient(1) Junction Temperature Range Storage Temperature Range mA mW °C/W °C °C Device Marking BC856AW=3A; BC856BW=3B; BC857AW=3E;BC857BW=3F; BC858AW=3J; BC858BW;=3K; BC858CW=3L 1. FR-5 = 1.0 x 0.75 x 0.062 in. WEITRON http://www.weitron.com.tw 1/6 14-Jun-06 BC856AW/BW BC857AW/BW BC858AW/BW/CW WEITRON Symbol Min Typ Max Unit Electrical Characteristics(TA=25ºC Unless Otherwise noted) Characteristics Off Characteristics Collector-Emitter Breakdown Voltage IC=-10mA Collector-Emitter Breakdown Voltage IC=-10uA, VEB=0 Collector-Base Breakdown Voltage IC=-10µA Emitter-Base Breakdown Voltage IE=-1.0µA Collector Cutoff Current VCB=-30V VCB=-30V, TA=150°C BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO -65 -45 -30 -80 -50 -30 -80 -50 -30 -5.0 -5.0 -5.0 -15 -4.0 V V(BR)CES V V V(BR)CBO V(BR)EBO V ICBO nA µA On Characteristics DC Current Gain IC=-10µA, VCE=-5.0V IC=-2.0mA,VCE=-5.0V) BC856A,BC857A,BC858A BC856B,BC857B,BC858B BC858C BC856A,BC857A,BC858A BC856B,BC857B,BC858B BC858C 125 220 420 -0.6 90 150 270 180 290 520 -0.7 -0.9 250 450 800 -0.3 -0.65 -0.75 -0.82 hFE - Collector-Emitter Saturation Voltage IC=-10mA, IB=-0.5mA IC=-100mA,IB=-5.0mA Base-Emitter Saturation Voltage IC=-10mA, IB=-0.5mA IC=-100mA IB=-5.0mA Base-Emitter On Voltage IC=-2.0mA, VCE=-5.0V IC=-10mA, VCE=-5.0V VCE(sat) V VBE(sat) V VBE(on) V Small-signal Characteristics Current-Gain-Band width Product IC=-10mA, VCE=-5.0V, f=100MHz Output Capacitance VCB=-10V,f=1.0MHz Noise Figure IC=-0.2mA, VCE=-5.0V, Rs=2.0kΩ, f=1.0kHz, BW=200Hz fT Cob NF 100 4.5 10 MHz pF dB WEITRON http://www.weitron.com.tw 2/6 14-Jun-06 BC856AW/BW BC857AW/BW BC858AW/BW/CW WEITRON BC857 / BC858 2.0 –1.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 V, VOLTAGE (VOLTS) VCE= –10 V T A = 25°C –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 T A = 25°C V BE(sat) @ I C /I B=10 1.0 0.7 V BE(on) @ V CE = –10 V 0.5 0.3 V CE(sat) @ I C /I B = 10 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 0 I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain θVB , TEMPERATURE COEFFICIENT (mV/ °C) Figure 2. “Saturation” and “On” Voltages I C , COLLECTOR CURRENT (mAdc) VCE, COLLECTOR– EMITTER VOLTAGE (V) –2.0 1.0 T A = 25°C –1.6 –55°C to +125°C 1.2 1.6 –1.2 2.0 –0.8 IC= I C= –50 mA I C= –20 mA –10 mA I C= –200 mA I C= –100 mA 2.4 –0.4 2.8 0 –0.02 –0.1 –1.0 –10 –20 –0.2 –1.0 –10 –100 Figure 3. Collector Saturation Region 400 I B , BASE CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient I C , COLLECTOR CURRENT (mA) 10.0 C ib T A=25°C fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) 7.0 300 C, CAPACITANCE(pF) 200 150 100 80 5.0 3.0 C ob V CE = –10V T A = 25°C 2.0 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product I C , COLLECTOR CURRENT (mAdc) WEITRON http://www.weitron.com.tw 3/6 14-Jun-06 BC856AW/BW BC857AW/BW BC858AW/BW/CW WEITRON BC856 hFE , DC CURRENT GAIN (NORMALIZED) –1.0 V CE = –5.0V T A = 25°C 2.0 1.0 0.5 0.2 –0.1–0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 I C , COLLECTOR CURRENT (mA) T J= 25°C V, VOLTAGE (VOLTS) –0.8 –0.6 –0.4 –0.2 0 –0.2 VBE(sat) @ I C/I B=10 VBE @VCE= –5.0 V VCE(sat) @ I C /I B= 10 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain Figure 8. “On” Voltage V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) –1.6 IC = –20mA –50mA –100mA –200mA θVB , TEMPERATURE COEFFICIENT (mV/°C) –2.0 –1.0 –1.4 –1.8 –2.2 –2.6 –3.0 –0.2 –1.2 –0.8 –0.4 –10mA θ VB for V BE –55°C to 125°C TJ= 25°C 0 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 Figure 9. Collector Saturation Region fT, CURRENT– GAIN – BANDWIDTH PRODUCT T I B , BASE CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient I C , COLLECTOR CURRENT (mA) 40 C, CAPACITANCE (pF) 20 T J= 25°C C ib 500 VCE= –5.0V 200 100 50 20 –1.0 –10 –100 10 6.0 4.0 2.0 –0.1 –0.2 –0.5 C ob –1.0 –2.0 –5.0 –10 –20 –50 –100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product WEITRON http://www.weitron.com.tw 4/6 14-Jun-06 BC856AW/BW BC857AW/BW BC858AW/BW/CW WEITRON r( t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 D=0.5 0.2 0.05 SINGLE PULSE 0.1 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t 1 /t 2 Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k 10k Figure 13. Thermal Response –200 I C , COLLECTOR CURRENT (mA) –100 –50 TA= 25°C 1s TJ= 25°C 3 ms –10 –5.0 –2.0 –1.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calcula ted f rom t he d a t a i n F igure 1 3 . A t h igh c ase o r a mbien t temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. The safe operating area curves indicate I C –V CE limits of the –0.5 –10 –30 –45 –65 –100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area WEITRON http://www.weitron.com.tw 5/6 14-Jun-06 BC856AW/BW BC857AW/BW BC858AW/BW/CW WEITRON SOT-323 Outline Demensions Unit:mm A TOP VIEW D E G H B C K L J M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw 6/6 14-Jun-06
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