BC858

BC856BDW Series PNP Dual General Purpose Transistors P b Lead(Pb)-Free 3 2 1 65 4 1 4 5 6 2 3 PNP+PNP SOT-363(SC-88) Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC BC856 65 80 5.0 100 BC857 45 50 5.0 100 BC858 30 30 5.0 100 Unit V V V mA Thermal Characteristics Characteristics Total Device Dissipation Per Device FR-5 Board(1)TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction Temperature Range Storage Temperature Range Note : FR-5=1.0 x 0.75 x 0.062 inch Symbol PD RθJA Tj Tstg Max 380 250 3.0 328 +150 -55 to +150 Unit mW mW/ °C °C/W °C °C Device Marking BC856BDW=3B , BC857BDW=3F , BC857CDW=3G , BC858BDW=3K , BC858CDW=3L WEITRON http://www.weitron.com.tw 1/6 14-Nov-07 BC856BDW Series Electrical Characteristics Off Characteristics Collector-Emitter Breakdown Voltage IC=10mA BC856 BC857 BC858 BC856 BC857 BC858 BC856 BC857 BC858 BC856 BC857 BC858 V(BR)CEO -65 -45 -30 -80 -50 -30 -80 -50 -30 -5.0 -5.0 -5.0 -15 -4.0 V (TA=25°C Unless Otherwise noted) Symbol Min Typ Max Unit Characteristics Collector-Emitter Breakdown Voltage VEB=0V, IC=-10µA Emitter-Base Breakdown Voltage IC=-10µA V(BR)CES V V(BR)CBO V Emitter-Base Breakdown Voltage IE=-1.0µA Collector Cuto Current VCB=-30V VCB=-30V, TA=150°C V(BR)EBO V ICBO nA µA On Characteristics DC Current Gain VCE = –5.0V, IC = –10µA VCE = –5.0V, IC = –2.0mA BC856B, BC857B, BC858C BC857C, BC858C BC856B, BC857B, BC858C BC857C, BC858C hFE 220 420 150 270 290 520 -0.7 -0.9 450 800 -0.3 -0.65 -750 -820 - Collector-Emitter Saturation Voltage IC = –10mA, IB = –0.5mA IC = –100mA, IB = –5.0mA Base-Emitter Saturation Voltage IC = –10mA, IB = –0.5mA IC = –100mA, IB = –5.0mA Base-Emitter Voltage VCE = –5.0V, IC = –2.0mA VCE = –5.0V, IC = –10mA VCE(sat) -600 - V VBE(sat) VBE(on) V mV Small-Signal Characteristics Current-Gain-Bandwidth Product VCE = –5.0V, IC = –10mA, f = 100MHz Output Capacitance VCB = –10V, f = 1.0kHz Noise Figure fT Cob NF 100 - - 4.5 10 MHz pF dB VCE = –5.0V, IC = –0.2mA, RS = 2.0k , f = 1.0kHz, BW = 200Hz http://www.weitron.com.tw WEITRON 2/6 14-Nov-07 BC856BDW Series Electrical Characteristics ° ° Figure 1. DC Current Gain Figure 2. “On” Voltage ° θ ° ° Figure 3. Collector Saturation Region θ ° Figure 4. Base–Emitter Temperature Coefficient ° Figure 5. Capacitance Figure 6. Current–Gain – Bandwidth Product http://www.weitron.com.tw WEITRON 3/6 14-Nov-07 BC856BDW Series ° ° Figure 7. Normalized DC Current Gain Figure 8. “Saturation” and “On” Voltages ° ° ° Figure 9. Collector Saturation Region θ ° Figure 10. Base–Emitter Temperature Coefficient ° ° Figure 11. Capacitances Figure 12. Current–Gain – Bandwidth Product http://www.weitron.com.tw WEITRON 4/6 14-Nov-07 BC856BDW Series θ θ ° θ θ Figure 13. Thermal Response ° ° The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Figure 14. Active Region Safe Operating Area http://www.weitron.com.tw WEITRON 5/6 14-Nov-07 BC856BDW Series SOT-363 Package Outline Dimensions A Unit:mm SOT-363 4 6 5 BC 1 2 3 D E H K J L M Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 0.5 mm (min) 0.4 mm (min) 1.9 mm http://www.weitron.com.tw WEITRON 0.65 mm 0.65 mm 6/6 14-Nov-07