BC869

BC869 PNP Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS ( TA=25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO IC PD TJ Tstg Value -32 -20 -5.0 -1.0 500 +150 -65 to +150 Unit V V V A mW ˚C ˚C Total Device Dissipation TA=25°C Junction Temperature Range Storage Temperature Range OFF CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage, IC = -0.1mA, IE = 0 Collector-Emitter Breakdown Voltage, IC = -1mA, I B = 0 Emitter-Base Breakdown Voltage, IE = -0.1mA,IC = 0 Collector Cut-o Current, VCB = -25V, IE = 0 Emitter Cut-o Current, VEB = -5.0V, IC = 0 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -32 -20 -5.0 - Max -0.1 -0.1 Unit V V V µA µA W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/3 15-Nov-07 BC869 ELECTRICAL CHARACTERISTICS ( TA=25°C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain VCE = -10V, I C = -5.0mA VCE = -1.0V, IC = -500mA VCE = -1.0V, IC = -1.0A Collector-Emitter Saturation Voltage IC = -1.0A, IB = -100mA Base-Emitter Voltage VCE = -1.0V, IC = -1.0A TransitionFrequence VCE = -5V, IC = -10mA, f = 100MHz hFE1 hFE2 hFE3 VCE(sat) VBE(on) fT 50 100 60 40 375 -0.5 -1.0 V V MHz - DEVICE MARKING Rank Range Marking BC869 100-375 CEC BC869-16 100-250 CGC BC869-25 160-375 CHC WEITRON http://www.weitron.com.tw 2/3 15-Nov-07 BC869 SOT-89 Outline Dimensions unit: mm E G A J C H K L B D Dim A B C D E G H J K L SOT-89 Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500T YP 3.100 2.900 WEITRON http://www.weitron.com.tw 3/3 15-Nov-07