BCX54/BCX55/BCX56
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
FEATURES High current Low voltage Medium power general purposes Driver stages of audio amplifiers. MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD BCX55:BE BCX55-10:BG BCX52-16:BM BCX56:BH BCX56-10:BK BCX56-16:BL
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO Collector-Base Voltage Parameter BCX54 BCX55 BCX56 VCEO Collector-Emitter Voltage BCX54 BCX55 BCX56 VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 45 60 100 45 60 80 5 1 500 150 -65-150 V A mW ℃ ℃ V V Units
1. BASE 2. COLLECTOR 3. EMITTER
1
2
3
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Symbol V(BR)CBO IC=1mA,IB=0 Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat) VBE fT IE=100μA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V,IC=5mA VCE=2V,IC=150mA VCE=2V,IC=500mA IC=-500mA,IB=-50mA VCE=2V,IC=500mA VCE=5V,IC=10mA,f=100MHz 130 40 63 25 0.5 1 V V MHz 250 Test conditions BCX54 BCX55 BC56 BCX54 BCX55 BCX56 MIN 45 60 100 45 60 80 5 0.1 0.1 V μA μA V V TYP MAX UNIT IC=100μA,IE=0
W E IT R O N
h t t p : / / w w w . w e i t r o n . c o m . tw
1/2
25-Jun-08
BCX54/BCX55/BCX56
CLASSIFICATION OF
Rank
hFE(2)
BCX54 BCX55 BCX56 BCX54-10; BCX55-10; BCX56-10 63-160 BCX54-16; BCX55-16; BCX56-16 100-250
Range
63-250
Typical Characteristics
WEITRON
http://www.weitron.com.tw
2/2
25-Jun-08
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