BD237

BD233/235/237 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage , Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg BD233 45 45 5.0 BD235 60 60 5.0 2.0 1.25 150 -65 to +150 BD237 100 80 5.0 Unit V V V A W ˚C ˚C Device Marking BD233 = BD233 , BD235 = BD235 , BD237 = BD237 WEITRON http://www.weitron.com.tw BD233/235/237 ELECTRICAL CHARACTERISTICS ( TA=25°C unless otherwise noted) (Countinued) Characteristics Collector-Emitter Breakdown Voltage IC = 100µA, IE = 0 BD233 BD235 BD237 Collector-Base Breakdown Voltage IC = 10mA, IB = 0 BD233 BD235 BD237 Symbol Min 45 60 100 45 60 80 5.0 Max Unit V V(BR)CBO V(BR)CEO - V Emitter-Base Breakdown Voltage IC = 0, IE = 100µA Collector Cutoff Current VCB = 45V, IE=0 VCB = 60V, IE=0 VCB = 100V, IE=0 Emitter Cutoff Current VEB = 5.0V, IC=0 BD233 BD235 BD237 V(BR)EBO - V ICBO - 100 µA IEBO - 1.0 mA ON CHARACTERISTICS DC Current Gain VCE = 2.0V, IC = 150mA VCE = 2.0V, IC = 1.0A Collector-Emitter Saturation Voltage IC = 1.0A, IB = 100mA Transition frequency VCE = 10V, IC = 250mA, f = 10MHz hFE(1) hFE(2) 40 25 - VCE(sat) - 0.6 V fT 3.0 - MHz WEITRON http://www.weitron.com.tw BD233/235/237 TO-126 Outline Dimensions TO-126 Dim A B C D E G H J K L M S unit:mm G B A H D L J K M C E S φ φ MAX Min 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290TYP 4.480 4.680 15.300 15.700 2.100 2.300 3.900 4.100 3.200 3.000 WEITRON http://www.weitron.com.tw