BSS138

BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns 1 GATE 2 SOURCE 3 1 2 Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings ( TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(tp 10us) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDSS VGS ID IDM PD RθJA TJ, Tstg Value 50 _ +20 200 800 225 556 Unit V V mA mA mW C/W C -55 to 150 Device Marking BSS138=J1 WEITRON http://www.weitron.com.tw BSS138 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit Static (1) Drain-Source Breakdown Voltage VGS=0V, ID=250 A Gate-Source Threshold Voltage VDS=VGS, ID=1.0mA Gate-Source Leakage Current + VDS=0V, VGS= -20V Zero Gate Voltage Drain Current VDS=25V, VGS=0V VDS=50V, VGS=0V Drain-Source On-Resistance VGS=2.75V, ID < 200mA, TA=-40 C to + 85 C VGS=5.0V, ID=200mA Forward Transconductance VDS=25V, ID=200mA, f=1.0KHZ V(BR)DSS VGS (th) IGSS IDSS 50 0.5 1.5 + -0.1 0.1 0.5 10 3.5 V V uA A - rDS (on) gfs 100 5.6 - - - mS Dynamic Input Capacitance VDS=25V, VGS=0V, f=1MHZ Output Capacitance VDS=25V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Ciss Coss Crss - 40 12 3.5 50 25 5.0 PF Switching (2) Turn-On Time VDD=30V, ID=200mA Turn-Off Time VDD=30V, ID=100mA td(on) td(off) - - 20 nS 20 http://www.weitron.com.tw WEITRON BSS138 T Y P IC A L E L E C T R IC A L C HA R A C T E R IS T IC S 0.8 I D , DRAIN CURRENT (AMPS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 TJ = 25 C VGS = 3.5 V VGS = 3.25 V VGS = 3.0 V VGS = 2.75 V VGS = 2.5 V I D , DRAIN CURRENT (AMPS) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 VDS = 10 V WE IT R ON 25 C -5 5 C 150 C 3 3.5 4 4.5 VDS, DRAIN-TO-SOURCE VOL TAGE (VOLTS) VGS , GATE-T O-SOURCE VOL TAGE (VOLTS) F igure 1. On-R egion C harac teris tic s 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 - 55 -5 45 95 145 0.75 - 55 -30 VGS = 4.5 V ID = 0.5 A VGS = 10 V ID = 0.8 A 1.25 F igure 2. T rans fer C harac teris tic s R DS(on), DRAIN-TO-SOURCE RESIST ANCE (NORMALIZED) ID = 1.0 mA Vgs(th), VARIANCE (VOL TS) 1.125 1 0.875 -5 20 45 70 95 120 145 TJ , JUNCTION TEMPERATURE ( C) TJ , JUNCTION TEMPERA TURE ( C) F igure 3. On-R es is tanc e Variation with T emperature VGS , GATE-T O-SOURCE VOLTAGE (VOLTS) 10 F igure 4. T hres hold V oltage Variation w ith Temperature VDS = 40 V TJ = 25 C 8 6 4 ID = 200 mA 2 0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC) F igure 5. G ate C harge WEITRON http://www.weitron.com.tw BSS138 T Y P IC A L E L E C T R IC A L C HA R A C T E R IS T IC S R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) 10 9 8 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 -55 C 25 C VGS = 2.5 V R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) 8 VGS = 2.75 V 7 6 5 4 3 2 1 0 0.05 0.1 WE IT R ON 150 C 150 C 25 C -55 C 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) F igure 6. On-R es is tanc e vers us Drain C urrent R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 -55 C 25 C 4.5 4 3.5 3 2.5 2 1.5 1 F igure 7. On-R es is tanc e vers us Drain C urrent VGS = 4.5 V 150 C VGS = 10 V 150 C 25 C -55 C 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) F igure 8. On-R es is tanc e vers us Drain C urrent F igure 9. On-R es is tanc e vers us Drain C urrent 1 I D , DIODE CURRENT (AMPS) 120 100 0.1 TJ = 150 C 25 C -55 C 80 60 0.01 Ciss 40 20 Coss Crss 0 5 10 15 20 25 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD, DIODE FORWARD VOL AGE (VOLTS) T F igure 10. B ody Diode F orward V oltage F igure 1 1 . C apac itanc e http://www.weitron.com.tw WEITRON