ESD1201B2C

ESD0501B2C Surface Mount TVS For ESD Protection Diode P b Lead(Pb)-Free Features: * Stand-o Voltage: 3.3 V−12 V * Low Leakage * Response Time is Typically < 1 ns * ESD Rating of Class 3 (> 16 kV) per Human Body Model * IEC61000−4−2 Level 4 ESD Protection * These are Pb−Free Devices Main Applications: * Cellular Handsets & Accessories * Personal Digital Assistants (PDAs) * Notebooks & Handhelds * Portable Instrumentation * Digital Cameras * Peripherals * MP3 Players Mechanical Characteristics: Peak Pulse Power 100 Watts Reverse WorkingVoltage 3.3-12 Volts + TOP BACK + BFBP-02C BFBP Outline Dimensions Unit:mm Symbol A A1 D E D1 TOP VIEW BOTTOM VIEW Min 0.450 0.010 0.950 0.550 Max 0.550 0.070 1.050 0.650 0.450 Ref. 0.400 Ref. 0.275 0.675 0.275 0.325 0.725 0.325 E1 b e L L1 0.010 Ref. SIDE VIEW WE ITR O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/3 15-Apr-09 ESD0501B2C Maximum Ratings (TA=25°C unless otherwise noted) Parameter IEC61000−4−2(ESD) ESD voltage Contact per human body model Per machine model PD Rθ J A TL Tj, Tstg Symbol Limits ±30 16 400 150 833 260 -55 ~ +150 Un i t KV KV V mW ℃/W ℃ ℃ Total power dissipation on FR-5 board (Note 1) Thermal Resistance Junction−to−Ambient Lead Solder Temperature − Maximum (10 Second Duration) Junction and Storage temperature range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT IF VF Ppk C Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF Peak Power Dissipation Max. Capacitance @VR=0 and f =1MHz ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ I F= 10mA for all types) IR (μA) Device Device* Marking Max ESD3301B2C ESD0501B2C ESD1201B2C Max Min mA Max Typ Typ VRWM (V) @ VRWM IT(Note 2) VBR (V) @ IT (Note 3) (A) (Note 3) Max IPP(A) VC (V) @Max IPP Ppk (W) (8 x 20μs) C (pF) A B C 3.3 5.0 12 2.5 1.0 1.0 5.0 6.2 13.5 1.0 1.0 1.0 9.8 8.7 5.9 11.4 12.3 23.7 102 107 140 80 65 30 *Other voltages available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 3. WE ITR O N h t t p : / / w w w . w e i t r o n . c o m . tw 2/3 15-Apr-09 ESD0501B2C TYPICAL CHARACTERISTICS WEITRON http://www.weitron.com.tw 3/3 15-Apr-09