ESD3305B6E

ESD3305B6E Low Voltage TVS for ESD Protection P b Lead(Pb)-Free Features: * Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) * Protects two data lines * Low clamping voltage * Working voltage: 3.3V * Low leakage current * Solid-state silicon-avalanche technology Peak Pulse Power 40 Watts Reverse Working Voltage 3.3 VOLTS BOTTOM VIEW BFBP-06E Main Applications: * Cellular Handsets & Accessories * Personal Digital Assistants (PDAs) * Notebooks & Handhelds * Portable Instrumentation * Digital Cameras * MP3 Players BFBP-06E Outline Dimensions Unit:mm Symbol A A1 D E D1 E1 b e L L1 Min Max 0.45 0.55 0.01 0.09 1.55 1.65 1.55 1.65 1.00 Ref. 0.50 Ref. 0.15 0.25 0.50 BSC. 0.25 0.35 0.00 0.05 WEITRON http://www.weitron.com.tw 1/3 30-Apr-08 ESD3305B6E Maximum Ratings (TA=25°C unless otherwise noted) Parameter Peak Pul se Power (tp= 8/ 20 s) Symbol PPP IPP Value 40 5 Units W A kV °C °C Maximum Peak Pulse Current (tp = 8/20μs) IEC61000-4-2 Air(ESD) IEC61000-4-2 Contact(ESD) Operating Temperature Storage Temperature ESD TJ TSTG 20 15 -55 to +125 -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap -Back Voltage Reverse Leakage Current Clamp ing Voltage Clamp ing Voltage Reverse Clamp ing Voltage Junction Cap acitance I/O p in to Gnd IPT = 2μA ISB = 50mA VRWM = 3.3V IPP = 1A, tp = 8/20μs Any I/O to Gnd IPP = 5A, tp = 8/20μs Any I/O to Gnd IPP = 1A, tp = 8/20μs Any I/O to Gnd Symbo l VRWM V PT VSB IR VC VC VCR Minimum Typical Maximum 3.3 4.6 Units V V V μA V V 3.5 2.8 3.9 0.05 0.5 5.5 8.0 2.4 - - V VR = 0V, f = 1MHz Cj VR = 0V, f = 1MHz 20 12 10 7.5 25 pF pF pF pF I/O p in to Gnd VR = 3.3V, f = 1MHz I/O p in to I/O p in I/O p in to I/O p i n VR = 3.3V, f = 1MHz - 12.5 - Device Marking Item Marking 6 5 4 3 1 Eqivalent Circuit diagram ESD3305B6E A CenterTab(GND) WE ITR O N h t t p : / / w w w . w e i t r o n . c o m . tw 2/3 30-Apr-08 ESD3305B6E 1 110 100 Peak Pulse Power - PPP (kW) 90 % of Rated Power or I PP 80 70 60 50 40 30 20 10 0.1 0.01 0.1 1 10 Pulse Duration - tp (µs) 100 1000 0 0 25 50 75 100 125 150 Ambient Temperature - TA (oC) Non-Repetitive Peak Pulse Power vs. Pulse Time 10 Power Derating Curve 8 7 Clamping Voltage - VC (V) 8 Forward Voltage - VF (V) 6 5 4 3 2 1 0 Waveform Parameters: tr = 8μs td = 20μs 6 4 Waveform Parameters: tr = 8μs td = 20μs 0 1 2 3 4 Peak Pulse Current - IPP (A) 5 6 2 0 0 1 Clamping Voltage vs. Peak Pulse Current Forward Voltage vs. Forward Current 2 3 4 Forward Current - IF (A) 5 6 1.2 f = 1 MHz 1 0.8 0.6 0.4 0.2 0 0 0.5 1 Line-Line CJ(VR) / CJ(VR=0) Line-Ground 1.5 2 2.5 Reverse Voltage - VR (V) 3 3.5 Normalized Capacitance vs. Reverse Voltage ESD Clamping (8kV Contact per IEC 61000-4-2) WEITRON http://www.weitron.com.tw 3/3 30-Apr-08