ESDA6V8V5

ESDA6V8V5 Series Quad Array for ESD Protection P b Lead(Pb)-Free Peak Pulse Power 100 Watts Reverse WorkingVoltage 6.8VOLTS This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at apremium. Features: * Low Leakage < 1µA @ 3 Volt * Breakdown Voltage: 6.8 Volt @ 1 mA * ESD Protection Meeting IEC61000-4-2 - Level 4 Mechanical Characteristics: * Void Free, Transfer-Molded, Thermosetting Plastic Case * Corrosion Resistant Finish, Easily Solderable * Package Designed for Optimal Automated Board Assembly * Small Package Size for High Density Applications 5 1 2 4 3 SOT-553 SOT-553 Outline Dimensions D 5 4 Unit:mm K SOT-553 Dim A B C D G J K S Min Max 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 REF 0.08 0.16 0.10 0.30 1.50 1.70 B 1 2 3 S G A J C WE ITR O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/3 09-Oct-07 ESDA6V8V5 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT VB R IF VF ZZT IZK ZZK Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK IPP VC VBR VRWM IR VF IT V IF I Uni-Directional MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Peak Power Dissipation (8 X 20 s @ TA = 25°C) (Note 1) Steady State Power - 1 Diode (Note 2) Thermal Resistance Junction to Ambient Above 25°C, Derate Maximum Junction Temperature Operating Junction and Storage Temperature Range ESD Discharge MIL STD 883C - Method 3015-6 IEC1000-4-2, Air Discharge IEC1000-4-2, Contact Discharge Symbol PPK PD R JA TJmax TJ Tstg VPP Value 100 300 370 2.7 150 -55 to +150 16 16 9 260 Unit W mW °C/W mW/°C °C °C kV Lead Solder Temperature (10 seconds duration) TL °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Device ESDA5V6V5 ESDA6V2V5 ESDA6V8V5 Breakdown Voltage VBR @ 1 mA (Volts) Min Nom Max Leakage Current IRM @ VRM VRWM IRWM ( A) VC Max @ IPP VC (V) IPP (A) Typ Capacitance @ 0 V Bias (Note 3) (pF) Max VF @ IF = 200 mA (V) 5.32 5.89 6.46 5.6 6.2 6.8 5.88 6.51 7.14 3.0 4.0 4.3 1.0 0.5 0.1 10.5 11.5 12.5 10 9.0 8.0 90 80 70 1.3 1.3 1.3 1. Non-repetitive current per Figure 1. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad. 3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C Device Marking Item ESDA5V6V5 ESDA6V2V5 ESDA6V8V5 Marking Eqivalent Circuit diagram 1 2 3 5 4 VE WE ITR O N h t t p : / / w w w . w e i t r o n . c o m . tw 2/3 09-Oct-07 ESDA6V8V5 Series 110 100 90 PERCENT OF IPP 80 70 60 50 40 30 20 10 0 c-t td = IPP/2 110 % OF RATED POWER OR IPP WAVEFORM PARAMETERS tr = 8 s td = 20 s 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 t, TIME ( s) 20 25 30 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 1. Pulse Waveform Figure 2. Power Derating Curve 14 VC, CLAMPING VOLTAGE (V) 12 10 8 6 4 2 0 1 3 5 7 9 10 11 12.5 13.5 C, CAPACITANCE (pF) 100 90 80 70 60 50 40 30 20 10 0 5.3 5.6 5.9 6.2 6.5 6.8 7.1 IPP, PEAK PULSE CURRENT (A) VBR, BREAKDOWN VOLTAGE (V) Figure 3. Clamping Voltage versus Peak Pulse Current Figure 4. Typical Capacitance WEITRON http://www.weitron.com.tw 3/3 09-Oct-07