ESDB0501B2C

ESDB0501B2C Surface Mount TVS For ESD Protection Diode P b Lead(Pb)-Free Features: * Stand-o Voltage : 5.0V * Low Leakage * Response Time is Typically < 1 ns * ESD Rating of Class 3 (> 16 kV) per Human Body Model * IEC61000−4−2 Level 4 ESD Protection * IEC61000−4−4 Level 4 EFT Protection * These are Pb−Free Devices Main Applications: * Cellular Handsets & Accessories * Personal Digital Assistants (PDAs) * Notebooks & Handhelds * Portable Instrumentation * Digital Cameras * Peripherals * MP3 Players Mechanical Characteristics: Total Power Dissipation 100m Watts Reverse WorkingVoltage 5.0 Volts + TOP BACK + BFBP-02C BFBP Outline Dimensions Unit:mm Symbol A A1 D E D1 TOP VIEW BOTTOM VIEW Min 0.450 0.010 0.950 0.550 Max 0.550 0.070 1.050 0.650 0.450 Ref. 0.400 Ref. 0.275 0.675 0.275 0.325 0.725 0.325 E1 b e L L1 0.010 Ref. SIDE VIEW WE ITR O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/2 15-Apr-09 ESDB0501B2C Maximum Ratings (TA=25°C unless otherwise noted) Parameter IEC61000−4−2(ESD) ESD voltage Air/ Contact per human body model Per machine model PD Rθ J A TL Tj, Tstg Symbol Limits ±30 16 400 100 1250 260 -55 ~ +150 Un i t KV KV V mW ℃/W ℃ ℃ Total power dissipation on FR-5 board (Note 1) Thermal Resistance Junction−to−Ambient Lead Solder Temperature − Maximum (10 Second Duration) Junction and Storage temperature range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT C Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Max. Capacitance @VR=0 and f =1MHz ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VRWM Device Device Marking Max DTESDB5V0LED02 Max Min Max mA V Max Max Max (V) @ VRWM (Note 2) IR (μA) VBR (V) @ IT IT @IPP = 5 A VC IPP(A) @Max IPP VC (V) C (pF) EB 5.0 1.0 5.8 7.8 1.0 10 11.2 12.5 30 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. WE ITR O N h t t p : / / w w w . w e i t r o n . c o m . tw 2/2 15-Apr-09