KTA1505

KTA1505 PNP General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(TA=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Value -35 -30 -5.0 -500 150 +150 -55 to +150 Unit V V V mA mW °C °C WEITRON http://www.weitron.com.tw 1/3 27-Apr-07 KTA1505 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC = -100µA, IE = 0A Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A Emitter-Base Breakdown Voltage IE= -100µA, IC =0 Collector Cutoff Current VCB = -35V, IE = 0A Emitter Cutoff Current VEB = -5V, IC = 0A Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -35 -30 -5.0 - Typ - Max -0.1 -0.1 Unit V V V µA µA ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA DC Current Transfer Ration VCE = -1V, IC = -100mA VCE = -6V, IC = -400mA VCE(sat) -0.25 V hFE 70 25 - 400 - SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-6V, IC = -20mA Celloctor Output Capacitance VCE=-6V, IE = 0, f=1MHz fT Cob 200 13 MHz pF CLASSIFICATION hFE Rank Range Marking O 70-140 AZO Y 120-240 AZY GR 200-400 AZG WEITRON http://www.weitron.com.tw 2/3 27-Apr-07 KTA1505 SOT-23 Outline Dimension A SOT-23 Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 TOP VIEW D E G H B C K J L M WEITRON http://www.weitron.com.tw 3/3 27-Apr-07