KTA1664_10

KTA166 PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -35 -30 -5.0 -0.8 0.5 -55 to +150 -55 to +150 Unit V V V A W ˚C ˚C ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-1mA, I E=0 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -35 -30 -5 Typ Max -0.1 -0.1 Unit V V V µA µA Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IE=-1mA, I C =0 Collector Cutoff Current VCB=-35V, IE=0 Collector Cutoff Current VEB =-5V, IC=0 WEITRON http://www.weitron.com.tw 1/3 -Ju - 0 KTA166 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain VCE=-1V, I C =-100mA DC Current Gain VCE=-1V, I C =-700mA Collector-Emitter Saturation Voltage IC=-1.5A, I B=-30mA Base-Emitter Voltage VCE=-1V, I C =-10mA hFE hFE VCE(sat) VBE 100 35 -0.5 320 -0.7 -0.8 V V DYNAMIC CHARACTERISTICS Transition Frequency VCE=-5V, IC =-10mA Output Capacitance VCB=-10V, IE=0, f=1MHz fT Cob 120 19 MHz pF CLASSIFICATION OF hFE Rank Range Marking O 100-200 RO Y 160-320 RY WEITRON http://www.weitron.com.tw 2/3 10-Jun-10 KTA1664 SOT-89 Outline Dimensions unit:mm E G Dim A SOT-89 Min J C H K L B D A B C D E G H J K L 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500 TYP 2.900 3.100 Max WEITRON http://www.weitron.com.tw 3/3 10-Jun-10