KTA1666

KTA1666 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value -50 -50 -5 -2.0 0.5 150 -55 to 150 Unit V V V A W ˚C ˚C WEITRON http://www.weitron.com.tw 1/3 05-Feb-09 KTA1666 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=-1mA,IE=0 Collector-Emitter Breakdown Voltage IC=-10mA,I B =0 Emitter-Base Breakdown Voltage IC=0,IE=-1mA IE=0,VCB=-50V IC=0,VEB=-5V ON CHARACTERISTICS DC Current Gain IC=-0.5A,VCE=-2V IC=-1.5A,VCE=-2V Collector-Emitter Saturation Voltage IC=-1A, IB =-50mA Base-Emitter Saturation Voltage IC=-1A, IB =-50mA DYNAMIC CHARACTERISTICS Transition Frequency IC=-500mA,VCE =-2V Collector Output Capacitance IE=0,VCB=-10V,f=1MHz Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A CLASSIFICATION OF hFE(1) Rank Range Marking O 70-140 WO Y 120-240 WY Turn on Time Storage Time Fall Time fT Cob t on tstg tf 120 40 0.1 1.0 0.1 MHz pF hFE(1) hFE(2) VCE(sat) VBE(sat) 70 40 240 -0.5 -1.2 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -50 -50 -5 Typ Max -0.1 -0.1 Unit V V V µA µA V V WEITRON http://www.weitron.com.tw 2/3 05-Feb-09 KTA1666 SOT-89 Outline Dimensions unit:mm E G Dim A SOT-89 J C H K L B D A B C D E G H J K L Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 WEITRON http://www.weitron.com.tw 3/3 05-Feb-09