KTC4375

KTC4375 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 30 30 5 1.5 0.5 150 -55 to 150 Unit V V V A W ˚C ˚C WEITRON http://www.weitron.com.tw 1/3 04-Feb-09 KTC4375 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=1mA,IE=0 Collector-Emitter Breakdown Voltage IC=10mA,IB=0 Emitter-Base Breakdown Voltage IC=0,IE=1mA IE=0,VCB=30V IC=0,VEB=5V Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 30 30 5 Typ Max 0.1 0.1 Unit V V V µA µA ON CHARACTERISTICS DC Current Gain IC=0.5A,VCE=2V Collector-Emitter Saturation Voltage IC=1.5A, IB =30mA Collector-Emitter Saturation Voltage IC=0.5A, VCE =2V hFE(1) VCE(sat) VBE(sat) 100 320 2 1 V V DYNAMIC CHARACTERISTICS Transition Frequency IC=0.5A,VCE=2V Collector Output Capacitance IE=0,VCB=10V,f=1MHz fT Cob 120 40 MHz pF CLASSIFICATION OF hFE(1) Rank Range Marking O 100-200 GO Y 160-320 GY WEITRON http://www.weitron.com.tw 2/3 04-Feb-09 KTC4375 SOT-89 Outline Dimensions unit:mm SOT-89 E G Dim A J C H K L B D A B C D E G H J K L Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 WEITRON http://www.weitron.com.tw 3/3 04-Feb-09