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KTC4377

KTC4377

  • 厂商:

    WEITRON

  • 封装:

  • 描述:

    KTC4377 - NPN EPITAXIAL PLANAR TRANSISTOR - Weitron Technology

  • 数据手册
  • 价格&库存
KTC4377 数据手册
KTC4377 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features: * Low saturation voltage, VCE(sat) ≤0.5V@2A/50mA * Excellent DC current gain characteristics. SOT-89 Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 30 10 6 2 0.5 150 -55 - 150 Unit V V V A W ˚C ˚C WEITRON http://www.weitron.com.tw 1/4 10-Jul-07 KTC4377 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=1mA,IE=0 Collector-Emitter Breakdown Voltage IC=10mA,IB=0 Emitter-Base Breakdown Voltage IC=0,IE=1mA Collector Cut-O Current IE=0,VCB=30V Emitter-Cut-O Current IC=0,VEB=6V ON CHARACTERISTICS* DC Current Gain IC=0.5A,VCE=1V IC=2A,VCE=1V Collector-Emitter Saturation Voltage IC=2A, IB=50mA Base-emitter on voltage IC=2A,VCE=1V *Pulse Test: Pluse Width ≤ 380µs, Duty Cycle ≤ 2%. DYNAMIC CHARACTERISTICS Transition Frequency IC=0.5A,VCE=1V Collector Output Capacitance IE=0,VCB=10V,f=1MHz fT Cob 150 27 MHz pF hFE(1) hFE(2) VCE(sat) VBE(on) 140 70 600 0.5 1.5 V V Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 30 10 6 Typ Max 0.1 0.1 Unit V V V µA µA CLASSIFICATION OF hFE(1) Rank Range Marking A 140-240 SA B 200-330 SB C 300-450 SC D 420-600 SD WEITRON http://www.weitron.com.tw 2/4 10-Jul-07 KTC4377 Typical Characterisrics 4.0 60 25 15 10 2.0 IB = 5mA COMMON EMITTER 1k IC[mA],COLLECTOR CURRENT hFE,DC CURRENT GAIN 500 300 3.0 100 50 30 COMMON EMITTER VCE = 1V 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 0 10 0.01 0.03 0.1 0.3 1 3 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Fig.1 IC - VCE 1 COMMON EMITTER IC/IB = 10 Fig.2 hFE - IC 4.0 3.2 2.4 1.6 0.8 0 IC[mA],COLLECTOR CURRENT IC[mA],COLLECTOR CURRENT 0.5 0.3 COMMON EMITTER VCE = 1V 0.1 0.05 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE EMITTER VOLTAGE Fig.3 VCE(sat) - IC 10 IC MAX(PULSE) Fig.4 IC - VBE COLLECTOR POWER DISSIPATION PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 2 1 2 1 IC[mA],COLLECTOR CURRENT 3 IC MAX(CONTINUOUS) DC 10 0m S MOUNTED ON CERAMIC SUBSTRATE (250mm 2x0.8t) s m 10 1 0.3 0.1 0.03 0.01 0.1 O PE RA TI O N SING NONREPETITIVE CURVES MUST BE DERATED LINEARLY WITH IN CREASE IN TEMPERATURE 0 20 40 60 80 100 120 140 160 0.3 1 3 10 30 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Fig.6 PC - Ta Fig.5 SAFE OPERATING AREA WEITRON http://www.weitron.com.tw 3/4 10-Jul-07 KTC4377 SOT-89 Outline Dimensions unit:mm E G Dim A SOT-89 J C H K L B D A B C D E G H J K L Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 WEITRON http://www.weitron.com.tw 4/4 10-Jul-07
KTC4377 价格&库存

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