KTC4379
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1 2 3
SOT-89
ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 50 50 5 2.0 0.5 150 -55 to 150 Unit V V V A W ˚C ˚C
WEITRON
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05-Feb-09
KTC4379
ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=1mA,IE=0 Collector-Emitter Breakdown Voltage IC=10mA,IB=0 Emitter-Base Breakdown Voltage IC=0,IE=1mA IE=0,VCB=50V IC=0,VEB=5V ON CHARACTERISTICS DC Current Gain IC=0.5A,VCE=2V IC=1.5A,VCE=2V Collector-Emitter Saturation Voltage IC=1A, IB =50mA Base-Emitter Saturation Voltage IC=1A, IB =50mA DYNAMIC CHARACTERISTICS Transition Frequency IC=50mA,VCE=2V Collector Output Capacitance IE=0,VCB=10V,f=1MHz Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A CLASSIFICATION OF hFE(1) Rank Range Marking O 70-140 UO Y 120-240 UY Turn on Time Storage Time Fall Time fT Cob t on tstg tf 120 30 0.1 1.0 0.1 MHz pF hFE(1) hFE(2) VCE(sat) VBE(sat) 70 40 240 0.5 1.2 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 50 50 5 Typ Max 0.1 0.1 Unit V V V µA µA
V V
WEITRON
http://www.weitron.com.tw
2/5
05-Feb-09
KTC4379
Typical Characteristics
WEITRON
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05-Feb-09
KTC4379
WEITRON
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05-Feb-09
KTC4379
SOT-89 Outline Dimensions
unit:mm
E G
Dim
A
SOT-89
J
C
H
K L
B
D
A B C D E G H J K L
Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100
WEITRON
http://www.weitron.com.tw
5/5
05-Feb-09
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