KTD1304

KTD1304 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1 2 3 SOT-23 ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 25 20 12 0.3 0.2 150 -55 - 150 Unit V V V A W ˚C ˚C WEITRON http://www.weitron.com.tw 1/4 05-Feb-09 KTD1304 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=0.1mA,I E =0 Collector-Emitter Breakdown Voltage IC=1mA,I B=0 Emitter-Base Breakdown Voltage IC=0,IE=0.1mA IE=0,VCB=25V IC=0,VEB=12V Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 25 20 12 Typ Max 0.1 0.1 Unit V V V µA µA ON CHARACTERISTICS DC Current Gain IC=4mA,VCE=2V IC=4mA,VCE=2V Collector-Emitter Saturation Voltage IC=0.1A, IB =10mA Base-Emitter Saturation Voltage IC=0.1A, IB =10mA hFE(FOR) hFE(REV) VCE(sat) VBE(sat) 200 20 800 0.25 1 - V V DYNAMIC CHARACTERISTICS Transition Frequency IC=1mA,VCE=10V,f=100MHz Collector Output Capacitance IE=0,VCB=10V,f=1MHz On Resistance IB=1mA,Vin =0.3V,f=1KHz fT Cob R (on) 60 10 0.6 MHz pF WEITRON http://www.weitron.com.tw 2/4 05-Feb-09 KTD1304 Typical characteristics WEITRON http://www.weitron.com.tw 3/4 05-Feb-09 KTD1304 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 A TOP VIEW B C D E G H K L J M WEITRON http://www.weitron.com.tw 4/4 05-Feb-09