KTD1898

KTD1898 Epitaxial Planar NPN Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Temperature * Single pulse Pw = 20ms Symbol Limits 100 80 5 1 2 0.5 150, -55 to +150 Unit VCBO VCEO VEBO IC I CP PC Tj , Tstg Vdc Vdc Vdc A(DC) A (Pulse)* W C C ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) Parameter Symbol Collector-Base Breakdown Voltage(Ic=100uA) Collector-Emitter Breakdown Voltage(Ic=1mA) Emitter-Base Breakdown Voltage(I E =100uA) Collector Cutoff Current(VCB=80V) Emitter Cutoff Current(VEB =4V) BV CBO BV CEO BVEBO ICBO IEBO Min Typ - Max - Unit 100 80 5 - V V V uA uA 1 1 WEITRON http://www.weitron.com.tw KTD1898 C ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) (Countinued) Min Typ Max Unit Parameter Symbol DC Current Gain (VCE =3V, Ic=500mA) Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA) Transition Frequency (VCE=10V, Ic=50mA, f=100MHz) Output Capacitance (VCB=10V, I E=0A, f=1MHz) h FE V CE(sat) fT Cob 70 - 400 0.4 - - V MHz pF 100 20 CLASSIFICATION OF hFE Marking Rank Range ZO O 70-140 ZY Y 120-240 ZG GR 200-400 ELECTRICAL CHARACTERISTIC CURVES 1000 T a=25 °C C OLLE C TOR C UR R E NT : I C ( mA) C OLLE C T OR C UR R E NT : I C ( A) T a=25 °C V C E =5V 1.0 0.8 0.6 0.4 6mA 5mA 4mA 3mA 2mA 100 10 1 1mA 0.2 0 I B =0mA 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 B AS E T O E MIT T E R V O LT AG E : V B E ( V ) 0 2 4 68 C OLLE C T OR T O E MIT T E R V OLT AG E : V C E ( V ) FIG.1 Grounded Emitter Propagation Characteristics FIG.2 Grounded Emitter Output Characteristics WEITRON http://www.weitron.com.tw KTD1898 C OLLE C TOR S ATUR ATION VOLTAG E : V C E (sat) ( V) T a=25 °C T a=25 °C DC C UR R E NT G AIN : hF E 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0 .01 0 10 100 1000 I C /I B =20/1 10/1 1000 V C E =3V 1V 100 0 0 10 100 1000 C O L L E C T O R C UR R E NT : I C ( mA) C O LLE C T O R C UR R E NT : I C ( mA) FIG.3 DC Current Gain vs. Collector Current T a=25 °C V C E =5V FIG.4 Collector-Emitter Ssaturation Voltage vs. Collector Current 1000 T R ANS IT ION F R E QUE NC Y : fT ( MHz) 500 200 100 50 20 10 5 2 1 2 5 10 20 COLLE CTOR OUTPUT CAPACITANCE : Cob ( pF) E MITTE R INPUT C APACITANCE : C ib ( pF) T a=25 °C f=1MHz I E =0A Ic=0A 100 10 50 100 200 500 1000 1 0 .1 0.2 0.5 1 2 5 10 20 5 0 100 E MIT T E R C UR R E NT : −I E ( mA) C O LLE C T O R T O B AS E V O LT AG E : V C B ( V ) E MIT T E R T O B AS E V O LT AG E : V E B (V ) FIG.5 Gain Bandwidth Product vs. Emitter Current 10 5 FIG.6 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage T a=25 °C S ingle non-repetitive puls e C OLLE C TOR C UR R E NT : I C ( A) 2 1 500m 200m 100m 50m 20m 10m 5m I c Max (P uls e) DC 0 =1 Pw S m P 0 =1 w 2 S 0m 2m 1m 0.1 0.2 0.5 1 5 10 20 50 100 200 500 1000 C O L L E C T O R T O E MIT T E R V O L T AG E : V C E ( V ) FIG.7 Safe Operating Area WEITRON http://www.weitron.com.tw KTD1898 SOT-89 Outline Dimensions unit:mm SOT-89 E G A J C H K L B D Dim A B C D E G H J K L Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900 WEITRON http://www.weitron.com.tw