LB123T
NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
TO-126
*High voltage, high speed power switch *Switch regulators *PWM inverter and Motor controls *Solenoid and relay drivers *De ection circuits
a Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 600 400 8 1 1.25 150 -55 - 150 Unit V V V A W ˚C ˚C
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LB123T
ELECTRICAL CHARACTERISTICS ( Tamb =25°C unless otherwise speci ed) Characteristics Collector-Base Breakdown Voltage IC=1mA,IE=0 Collector-Emitter Breakdown Voltage IC=10mA,IB=0 Emitter-Base Breakdown Voltage IC=0,IE=1mA Collector Cut-O Current IE=0,VCB=600V Emitter-Cut-O Current IC=0,VEB=8V Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 600 400 8 Typ Max 10 10 Unit V V V µA µA
ON CHARACTERISTICS* DC Current Gain* IC=0.3A,VCE=5V IC=0.5A,VCE=5V IC=1A,VCE=5V Collector-Emitter Saturation Voltage* IC=100mA, IB=10mA IC=300mA, IB=30mA Base-emitter saturation voltage IC=100mA, IB=10mA IC=300mA, IB=30mA *Pulse Test: Pluse Width ≤ 380µs, Duty Cycle ≤ 2%. hFE(1) hFE(2) hFE(3) VCE(sat) 10 10 6 50 0.8 0.9 1.2 1.8 V V V V
VBE(sat)
CLASSIFICATION OF hFE(1) Rank Range B1 10-17 B2 13-22 B3 18-27 B4 23-32 B5 28-37 B6 33-42 B7 38-47 B8 43-50
WEITRON
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LB123T
Typical Characteristics
Fig.1 Current Gain - Collector Current
Fig.2 Saturation Voltage - Collector Current
Fig.3 On Voltage - Collector Current
Fig.4 Capacitance - Reverse-Biased Voltage
Fig.5 Switching Time - Collector Current
Fig.6 Safe Operating Area
WEITRON
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10-Jul-07
LB123T
TO-126 Outline Dimensions TO-126
Dim A B C D E G H J K L M S
unit:mm
G
B
A
H
D
L
J K
M
C E
S
φ
φ
MAX Min 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290TYP 4.480 4.680 15.300 15.700 2.100 2.300 3.900 4.100 3.200 3.000
WEITRON
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4/4
10-Jul-07
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