LL60

LL60/LL60P Schottky Barrier Diodes Schottky Barrier Diode 30-50 mAMPERES 40-45 VOLTS Features: *Silicon Epitaxial Planner Diode *Low Reverse Current and Low Forward Voltage *Low Current Rectification and High Speed Switching *High Reliability *Used in Recorder, Radio, TV, Telephone as Detectors Mechanical Data: *Case : MINI-MELF Glass Case (SOD-80) *Polarity: Color Band Denotescathode Band *Weight : Approx 0.05 gram MINI-MELF MINI-MELF Outline Dimensions Unit:mm A B C MINI MELF Dim A B C Min 3.30 1.30 0.28 Max 3.70 1.60 0.50 http//www.weitron.com.tw WEITRON LL60/LL60P Maximum Ratings ( Characteristic Pepetitive Peak Reverse Voltage Non-Repetitive Peak Forward Surge Current @t=1S Forward Continuous Current, TA =25 C Operating and Strorage Temperature Range TA=25 C Unless otherwise noted) Symbol VRRM IFSM IF TJ , TSTG LL60 40 150 30 -65 to +125 LL60P 45 500 50 Unit V mA mA C Electrical Characteristics Characteristic Forward Voltage IF=1 mA IF=30 mA IF=200 mA Rverse Current VR=15V LL60 LL60P LL60 LL60P ( TA=25 C Unless otherwise noted) Symbol VF Min - Tpy 0.32 0.24 0.65 0.65 Max 0.5 0.5 1.0 1.0 Unit V IR LL60 LL60P Cj Trr 0.1 0.5 2.0 6.0 0.5 1.0 1.0 uA Junction Capacitance LL60 VR=1V, f=1MHz LL60P VR=10V, f=1MHz Reverse Recovery Time IF=I R=1mA , Irr=1 mA, Rc=100 PF nS http//www.weitron.com.tw WEITRON LL60/LL60P 250 200 IF(mA) 0.70 0.60 0.50 LL6 IR(UA) LL 60 P 150 100 50 0P LL6 0 0.40 0.30 LL 0.20 0.10 0.2 0.4 VF(V) 0 0.6 0.8 1.0 0 5 10 15 VR(V) 20 60 25 30 FIG.1 Fowrad Current vs. Forward Voltage FIG.2 Reverse Current vs. Continuous Reverse Votlage 8 7 6 5 C J (pF) LL6 0P 4 3 2 1 0 2 4 6 VF(V) LL60 8 10 12 FIG.3 Junction Capacitance vs. Continuous Reverse Applied Voltage http//www.weitron.com.tw WEITRON