M8050LT1

M8050LT1 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 V CEO Value 25 40 5.0 800 300 2.4 417 0.1 100 100 25 40 5.0 0.15 0.15 u u 35 4.0 WEITRON http://www.weitron.com.tw 1/4 15-Jul-10 M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max UnitM ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC=800 mAdc, IB=80mAdc) hFE (1) 100 600 - VCE(sat) - 0.5 Vdc CLASSIFICATION OF hFE(1) Rank Range Marking P 100-200 80P Q 150-300 1YC R 200-400 1YE S 300-600 80S WEITRON http://www.weitron.com.tw 2/4 15-Jul-10 M8050LT1 1000 1 100 Saturation Voltage (V) VCE=1V hFE 0.1 10 VCE(sat) @ IC=10IB 1 0.001 0.01 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) FIG.1 - Current Gain & Collector Current FIG.2 - Saturation Voltage & Collector Current 1 1000 VCE=10V VBE(ON) @ VCE=1V Cutoff Frequency (MHz) On Voltage (V) 100 10 0.1 0.01 0.1 1 10 100 1000 1 1 10 100 1000 Collector Current (mA) Collector Current (mA) FIG.3 - On Voltage & Collector Current FIG.4 - Cutoff Frequency & Collector Current 100 Capacitance (pF) 10 Cob 1 0.1 1 10 100 Reverse-Biased Voltage (V) FIG.5 - Capacitance & Reverse-Biased Voltage WEITRON http://www.weitron.com.tw 3/4 15-Jul-10 M8050LT1 SOT-23 Outline Dimension SOT-23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 4/4 15-Jul-10