MMBD1009

MMBD1009 MMBD1011 Surface Mount Switching Diode P b Lead(Pb)-Free Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr≤4ns *Small Outline Surface Mount SOT-23 Package SWITCHING DIODE 200m AMPERES 75 VOLTS 3 1 2 SOT-23 SOT-23 Outline Dimensions A Unit:mm Dim Min Max T OP V I E W B C E G H D K J L M A B C D E G H J K L M 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 1/4 22-Sep-05 MMBD1009 MMBD1011 Maximum Ratings Characteristic Reverse Voltage Average Forward Current Peak Forward Surge Current Symbol VR IO IFM Value 75 200 500 Unit Volts mAdc mAdc Thermal Characteristics Characteristic Total Device Dissipation FR-5 Board *1, TA=25˚C Derate Above 25˚C Thermal Resistance Junction to Ambient Symbol PD RθJA PD RθJA TJ, Tstg Max 225 1.8 556 300 2.4 417 -55 to + 150 Unit mW mW/ ˚C ˚C/W mW mW/ ˚C ˚C/W ˚C Total Device Dissipation Alumina Substrate*2 TA=25˚C Derate Above 25˚C Thermal Resistance Junction to Ambient Junction and Storage Temperature *1 ER-5=1.0x0.75x0.062 in *2 Alumina=0.4x0.3x0.024 in 99.5% Alumina Electrical Characteristics Characteristic (TA=25˚C Unless Otherwise Note) (Each Diode) Symbol Min Max Unit Off Characteristics Reverse Breakdown Voltage IBR=100µAdc Reverse Voltage Leakage Current VR=50V VBR IR 75 Vdc - 0.1 µAdc WEITRON http://www.weitron.com.tw 2/4 22-Sep-05 MMBD1009 MMBD1011 Off Characteristic Characteristic Diode Capacition VR=0, f=1.0MHz Forward Voltage IF=10 mAdc IF=50 mAdc IF=100 mAdc Reverse Recovery Time (Figure 1.) IF=IR=10 mAdc, VR=5.0Vdc IR(REC)=1.0 mAdc, RL=100 Symbol CD Min Max 4.0 1000 1000 1200 4.0 Unit PF VF - mVdc trr - nS Device Marking Item MMBD1009 MMBD1011 Marking A2 A6 Eqivalent Circuit diagram 3 1 2 1 2 3 820 +10V 2.0K 100 µH 0.1µF Figure 1. Recovery Time Equivalent Test Circuit IF 0.1µF tr 10% tp t IF trr t D.U.T. OUTPUT PULSE GENERATOR 50 50 INPUT SAMPLING OSCILLOSCOPE VR 90% INPUT SIGNAL IR IR(REC)=1.0mA OUTPUT PULSE (IF=IR=10mA, MEASURED AT IR(REC)=1.0mA Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA 2. Input pules is adjusted so IR(peak) is equal to 10 mA 3. tp» trr WEITRON http://www.weitron.com.tw 3/4 22-Sep-05 MMBD1009 MMBD1011 100 IF, FORWARD CURRENT (mA) 10 IA. REVERSE CURRENT (µA) TA=85 C 10 TA=-40 C TA=150 C TA=125 C 1.0 TA=25 C 1.0 0.1 TA=85 C TA=55 C 0.01 TA=25 C 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 VF, FORWARD VOLTAGE (VOLTS) VR. REVERSE VOLTAGE (VOLTS) FIGURE 2 .FORWARD VOLTAGE FIGURE 3. LEAKAGE CURRENT 1.75 1.0 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.50 0.9 1.25 0.8 1.00 0.7 0.75 0 2.0 4.0 6.0 8.0 0.6 0 2 4 6 8 FIGURE 4. CAPACITANCE(2836) VR. REVERSE VOLTAGE (VOLTS) VR. REVERSW VOLTAGE (VOLTS) FIGURE 5. CAPACITANCE(2838) 0.68 CD. DIODE CAPACITANCE (PF) 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 FIGURE 6. CAPACITANCE(7000) VR. REVERSW VOLTAGE (VOLTS) WEITRON http://www.weitron.com.tw 4/4 22-Sep-05