MMBD4448HADW

MMBD4448HAQW MMBD4448HSDW MMBD4448HADW MMBD4448HTW MMBD4448HCDW Surface Mount Switching Multi-Chip Diode Array P b Lead(Pb)-Free MULTI-CHIP DIODES 500m AMPERES 100 VOLTS Features: * Fast Switching Speed * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation 65 1 4 2 3 Mechanical Data: * Case : SOT-363 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram * Weight : 0.006 grams(appro) SOT-363 SOT-363 Outline Dimensions A Unit:mm SOT-363 4 6 5 BC 1 2 3 D E H K J L M Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.40 0.30 2.20 1.80 0.10 0.80 1.10 0.25 0.40 0.10 0.25 WEITRON http://www.weitron.com.tw 1/4 04-Jan-06 MMBD4448HAQW MMBD4448HSDW MMBD4448HADW MMBD4448HTW MMBD4448HCDW Maximum Ratings@ TA= 25°C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current@ t = 1.0µs @ t = 1.0s Power Dissipation (Note 1) Thermal Resistant Junction to Ambient Air (Note 1) Operating Temperature Range Storage Temperature Range Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA Tj TSTG Value 100 80 57 500 250 4.0 2.0 200 625 +150 -65 to +150 Unit V V V mA mA A mW °C/W °C °C Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 2) IR = 100µA Forward Voltage (Note 2) IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA Reverse Current (Note 2) VR = 70V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V Total Capacitance VR = 6V, f = 1.0MHz Reverse Recovery Time VR = 6V, IF= 5mA Symbol V(BR)R Min 80 0.62 - Max 0.72 0.855 1.0 1.25 100 50 30 25 3.5 4.0 Unit V VF V IR - nA µA µA nA pF ns CT Trr - Notes:2. Short duration test pulse used to minimize self-heating effect. http://www.weitron.com.tw WEITRON 2/4 04-Jan-06 MMBD4448HAQW MMBD4448HSDW MMBD4448HADW MMBD4448HTW MMBD4448HCDW Device Marking Item Marking Eqivalent Circuit diagram 1 3 1 2 3 1 2 3 1 2 3 1 2 3 6 5 4 6 5 4 6 5 4 6 5 4 6 5 4 MMBD4448HAQW KA5 MMBD4448HADW KA6 MMBD4448HCDW KA7 MMBD4448HSDW KAB MMBD4448HTW KAA http://www.weitron.com.tw WEITRON 3/4 04-Jan-06 MMBD4448HAQW MMBD4448HSDW MMBD4448HADW MMBD4448HTW MMBD4448HCDW Typical Characteristics IF,INSTANTANEOUS FORWARD CURRENT (mA) IR,INSTANTANEOUS REVERSE CURRENT (nA) 1000 10000 TA=125ºC 100 1000 100 TA=75ºC 10 TA= -40ºC TA=0ºC TA=25ºC TA=75ºC TA=125ºC 10 TA=25ºC TA=0ºC TA= -40ºC 1 1 0.1 0 0.4 0.8 1.2 1.6 0.1 0 20 40 60 80 100 VF,INSTANTANEOUS FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE(V) Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse Characteristics 3 f=1MHz Pd,POWER DISSIPATION (mW) 250 200 CT,TOTAL CAPACITANCE (pF) 2.5 2 1.5 1 0.5 0 150 100 50 0 0 10 20 30 40 0 100 200 VR,REVERSEVOLTAGE(V) TA, AMBIENT TEMPERATURE (°C) Fig.3 Typical Capacitancevs .Reverse Voltage Fig.4 Power Derating Curve, Total Package 2.5 Trr,REVERSE RECOVERY TIME (nS) 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 IF, FORWARD CURRENT (mA) Fig.5 Reverse Recovery Time vs Forward Current http://www.weitron.com.tw WEITRON 4/4 04-Jan-06