MMBD7000

MMBD2836 / MMBD2838 MMBD7000 Surface Mount Switching Diode SWITCHING DIODE 100-200m AMPERRES 75-100 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 4ns *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions A Unit:mm TOP VIEW B C E G H D K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw MMBD2836 / MMBD2838 MMBD7000 Maximum Ratings Characteristic Reverse Voltage Forward Current (EACH DIODE) Symbol VR IF IFM MMBD2836 MMBD2838 MMBD7000 100 200 500 Unit Volts mAdc mAdc 75 100 Peak Forward Surge Current Thermal Characteristics Characteristic Total Device Dissipation FR-5 Board *1, TA=25 C Derate Above 25 C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate*2 TA=25 C Derate Above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD R qJA PD R qJA TJ, Tstg Max 225 1.8 556 300 2.4 417 -55 to + 150 Unit mW mW/ C C/W mW mW/ C C/W C *1 ER-5=1.0x0.75x0.062 in *2 Alumina=0.4x0.3x0.024 in 99.5% Alumina Electrical Characteristics Characteristic (TA=25 C Unless Otherwise Note) (Each Diode) Symbol Min Max Unit Off Characteristics Reverse Breakdown Voltage (IBR=100 µAdc ) MMBD2836/MMBD2838 MMBD7000 Reverse Voltage Leakage Current VR=50V MMBD2836/MMBD2838 MMBD7000 VR=100V MMBD7000 IR 0.1 1.0 3.0 100 µAdc VBR 75 100 Vdc - VR=50V, TJ=125 C MMBD7000 http://www.weitron.com.tw WEITRON MMBD2836 / MMBD2838 MMBD7000 Off Characteristic Symbol Characteristic Diode Capacition MMBD2836/MMBD2838 CD (VR=0, f=1.0MHz)MMBD7000 Forward Voltage (IF=1.0 mAdc) MMBD7000 (I F =10 mAdc) MMBD2836/MMBD2838 VF MMBD7000 (IF=50 mAdc) MMBD2836/MMBD2838 (IF=100 mAdc) MMBD2836/MMBD2838 MMBD7000 Reverse Recovery Time (Figure 1.) trr IF=IR=10 mAdc, VR=5.0Vdc IR(REC)=1.0 mAdc, RL=100 Min Max 4.0 1.5 700 1000 820 1000 1200 1100 4.0 Unit PF mVdc nS Device Marking Item MMBD2838 MMBD2836 MMBD7000 Marking A6 A2 M5C Eqivalent Circuit diagram 3 3 3 1 2 1 2 1 2 820 +10V 2.0K 100 µH 0.1µF Figure 1. Recovery Time Equivalent Test Circuit IF 0.1µF tr 10% tp t IF trr t D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR 90% INPUT SIGNAL IR IR(REC)=1.0mA OUTPUT PULSE (IF=IR=10mA, MEASURED AT IR(REC)=1.0mA Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA 2. Input pules is adjusted so IR(peak) is equal to 10 mA 3. tp» trr WEITRON http://www.weitron.com.tw MMBD2836 / MMBD2838 MMBD7000 FIGURE 2 .FORWARD VOLTAGE 100 10 FIGURE 3. LEAKAGE CURRENT TA=150 C T A =125 C IF, FORWARD CURRENT (mA) TA=85 C 10 TA=-40 C IA. REVERSE CURRENT (µA) 1.0 0.1 TA=85 C TA=25 C 1.0 TA=55 C 0.01 TA=25 C 0.001 0.1 0 10 20 30 40 50 0.2 0.4 0.6 0.8 1.0 1.2 VR. REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) FIGURE 4. CAPACITANCE(2836) 1.75 FIGURE 5. CAPACITANCE(2838) 1.0 CD. DIODE CAPACITANCE (PF) CD. DIODE CAPACITANCE (PF) 1.50 0.9 1.25 0.8 1.00 0.7 0.75 0 2.0 4.0 6.0 8.0 0.6 0 2 4 6 8 VR. REVERSE VOLTAGE (VOLTS) VR. REVERSW VOLTAGE (VOLTS) FIGURE 6. CAPACITANCE(7000) 0.68 CD. DIODE CAPACITANCE (PF) 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 VR. REVERSW VOLTAGE (VOLTS) WEITRON http://www.weitron.com.tw